Field-effect self-mixing terahertz detectors [electronic resource] / Jiandong Sun.

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Field-effect self-mixing terahertz detectors [electronic resource] / Jiandong Sun.

9783662486818 (electronic book)
3662486814 (electronic book)
9783662486795
3662486792

Berlin : Springer, 2016.

English

1 online resource (xviii, 126 pages) : illustrations.

10.1007/978-3-662-48681-8 doi

TK7877

621.381/3

A comprehensive device model considering both spatial distributions of the terahertz field and the field-effect self-mixing factor has been constructed for the first time in the thesis. The author has found that it is the strongly localized terahertz field induced in a small fraction of the gated electron channel that plays an important role in the high responsivity. An AlGaN/GaN-based high-electron-mobility transistor with a 2-micron-sized gate and integrated dipole antennas has been developed and can offer a noise-equivalent power as low as 40 pW/Hz1/2 at 900 GHz. By further reducing the gate length down to 0.2 micron, a noise-equivalent power of 6 pW/Hz1/2 has been achieved. This thesis provides detailed experimental techniques and device simulation for revealing the self-mixing mechanism including a scanning probe technique for evaluating the effectiveness of terahertz antennas. As such, the thesis could be served as a valuable introduction towards further development of high-sensitivity field-effect terahertz detectors for practical applications.

"Doctoral thesis accepted by Chinese Academy of Sciences, China."

Includes bibliographical references.

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Online resource; title from PDF title page (SpringerLink, viewed January 21, 2016).

Springer theses.

Print version: 9783662486795

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