@article{753997,
      author = {Bindal, Ahmet, and Hamedi-Hagh, Sotoudeh,},
      url = {http://library.usi.edu/record/753997},
      title = {Silicon nanowire transistors [electronic resource] /},
      abstract = {This book describes the n and p-channel Silicon Nanowire  Transistor (SNT) designs with single and dual-work  functions, emphasizing low static and dynamic power  consumption. The authors describe a process flow for  fabrication and generate SPICE models for building various  digital and analog circuits. These include an SRAM, a  baseband spread spectrum transmitter, a neuron cell and a  Field Programmable Gate Array (FPGA) platform in the  digital domain, as well as high bandwidth single-stage and  operational amplifiers, RF communication circuits in the  analog domain, in order to show this technology's true  potential for the next generation VLSI. Describes Silicon  Nanowire (SNW) Transistors, as vertically constructed MOS n  and p-channel transistors, with low static and dynamic  power consumption and small layout footprint; Targets  System-on-Chip (SoC) design, supporting very high  transistor count (ULSI), minimal power consumption  requiring inexpensive substrates for packaging; Enables  fabrication of different types of memory on the same chip,  such as capacitive cells and transistors with floating  gates that can be used as DRAMs and Flash memories.},
      doi = {https://doi.org/10.1007/978-3-319-27177-4},
      recid = {753997},
      pages = {1 online resource (xiv, 165 pages) :},
}