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000754380 020__ $$a9783662496831$$q(electronic book)
000754380 020__ $$a3662496836$$q(electronic book)
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000754380 0247_ $$a10.1007/978-3-662-49683-1$$2doi
000754380 035__ $$aSP(OCoLC)ocn945632660
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000754380 049__ $$aISEA
000754380 050_4 $$aTK7871.95
000754380 08204 $$a621.3815/2$$223
000754380 1001_ $$aLi, Zhiqiang,$$eauthor.
000754380 24514 $$aThe source/drain engineering of nanoscale Germanium-based MOS devices$$h[electronic resource] /$$cZhiqiang Li.
000754380 264_1 $$aBerlin :$$bSpringer,$$c2016.
000754380 300__ $$a1 online resource (xiv, 59 pages) :$$bcolor illustrations.
000754380 336__ $$atext$$btxt$$2rdacontent
000754380 337__ $$acomputer$$bc$$2rdamedia
000754380 338__ $$aonline resource$$bcr$$2rdacarrier
000754380 4901_ $$aSpringer theses
000754380 500__ $$a"Doctoral thesis accepted by Peking University, Beijing, China."
000754380 504__ $$aIncludes bibliographical references.
000754380 5050_ $$aIntroduction -- Ge-based Schottky barrier height modulation technology -- Metal germanide technology -- Contact resistance of Ge-based devices -- Conclusions.
000754380 506__ $$aAccess limited to authorized users.
000754380 588__ $$aOnline resource; title from PDF title page (viewed March 30, 2016)
000754380 650_0 $$aMetal oxide semiconductor field-effect transistors.
000754380 650_0 $$aMetal oxide semiconductors, Complementary.
000754380 650_0 $$aGermanium$$xElectric properties.
000754380 77608 $$iPrint version:$$z9783662496817
000754380 830_0 $$aSpringer theses.
000754380 852__ $$bebk
000754380 85640 $$3SpringerLink$$uhttps://univsouthin.idm.oclc.org/login?url=http://link.springer.com/10.1007/978-3-662-49683-1$$zOnline Access$$91397441.1
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