000754779 000__ 02576cam\a2200457Ii\4500 000754779 001__ 754779 000754779 005__ 20230306141726.0 000754779 006__ m\\\\\o\\d\\\\\\\\ 000754779 007__ cr\cn\nnnunnun 000754779 008__ 160414s2016\\\\sz\a\\\\o\\\\\001\0\eng\d 000754779 019__ $$a946606431 000754779 020__ $$a9783319316536$$q(electronic book) 000754779 020__ $$a3319316532$$q(electronic book) 000754779 020__ $$z9783319316512 000754779 020__ $$z3319316516 000754779 0247_ $$a10.1007/978-3-319-31653-6$$2doi 000754779 035__ $$aSP(OCoLC)ocn946609413 000754779 035__ $$aSP(OCoLC)946609413$$z(OCoLC)946606431 000754779 040__ $$aGW5XE$$beng$$erda$$epn$$cGW5XE$$dN$T$$dEBLCP$$dYDXCP$$dIDEBK$$dAZU$$dOCLCF 000754779 049__ $$aISEA 000754779 050_4 $$aTK7871.95 000754779 08204 $$a621.3815/284$$223 000754779 24500 $$aTunneling field effect transistor technology$$h[electronic resource] /$$cLining Zhang, Mansun Chan, editors. 000754779 264_1 $$aCham :$$bSpringer,$$c2016. 000754779 300__ $$a1 online resource (ix, 213 pages) :$$billustrations. 000754779 336__ $$atext$$btxt$$2rdacontent 000754779 337__ $$acomputer$$bc$$2rdamedia 000754779 338__ $$aonline resource$$bcr$$2rdacarrier 000754779 500__ $$aIncludes index. 000754779 5050_ $$aSteep Slope Devices and TFETs -- Tunnel-FET Fabrication and Characterization -- Compact Models of TFETs -- Challenges and Designs of TFET for Digital Applications -- Atomistic Simulations of Tunneling FETs -- Quantum Transport Simulation of III-V TFETs with Reduced-Order k ·p Method -- Carbon Nanotube TFETs: Structure Optimization with Numerical Simulation. 000754779 506__ $$aAccess limited to authorized users. 000754779 520__ $$aThis book provides a single-source reference to the state-of-the art in tunneling field effect transistors (TFETs). Readers will learn the TFETs physics from advanced atomistic simulations, the TFETs fabrication process and the important roles that TFETs will play in enabling integrated circuit designs for power efficiency. · Provides comprehensive reference to tunneling field effect transistors (TFETs); · Covers all aspects of TFETs, from device process to modeling and applications; · Enables design of power-efficient integrated circuits, with low power consumption TFETs. 000754779 588__ $$aOnline resource; title from PDF title page (SpringerLink, viewed April 14, 2016). 000754779 650_0 $$aField-effect transistors. 000754779 7001_ $$aZhang, Lining,$$eeditor. 000754779 7001_ $$aChan, Mansun,$$eeditor. 000754779 77608 $$iPrint version:$$z3319316516$$z9783319316512$$w(OCoLC)940933472 000754779 852__ $$bebk 000754779 85640 $$3SpringerLink$$uhttps://univsouthin.idm.oclc.org/login?url=http://link.springer.com/10.1007/978-3-319-31653-6$$zOnline Access$$91397441.1 000754779 909CO $$ooai:library.usi.edu:754779$$pGLOBAL_SET 000754779 980__ $$aEBOOK 000754779 980__ $$aBIB 000754779 982__ $$aEbook 000754779 983__ $$aOnline 000754779 994__ $$a92$$bISE