@article{755783,
      recid = {755783},
      author = {Shin, Changhwan,},
      title = {Variation-aware advanced CMOS devices and SRAM [electronic  resource] /},
      pages = {1 online resource.},
      abstract = {This book provides a comprehensive overview of  contemporary issues in complementary metal-oxide  semiconductor (CMOS) device design, describing how to  overcome process-induced random variations such as  line-edge-roughness, random-dopant-fluctuation, and  work-function variation, and the applications of novel CMOS  devices to cache memory (or Static Random Access Memory,  SRAM). The author places emphasis on the physical  understanding of process-induced random variation as well  as the introduction of novel CMOS device structures and  their application to SRAM. The book outlines the technical  predicament facing state-of-the-art CMOS technology  development, due to the effect of ever-increasing  process-induced random/intrinsic variation in transistor  performance at the sub-30-nm technology nodes. Therefore,  the physical understanding of process-induced  random/intrinsic variations and the technical solutions to  address these issues plays a key role in new CMOS  technology development. This book aims to provide the  reader with a deep understanding of the major random  variation sources, and the characterization of each random  variation source. Furthermore, the book presents various  CMOS device designs to surmount the random variation in  future CMOS technology, emphasizing the applications to  SRAM.},
      url = {http://library.usi.edu/record/755783},
}