000755783 000__ 06000cam\a2200505Ii\4500
000755783 001__ 755783
000755783 005__ 20230306141813.0
000755783 006__ m\\\\\o\\d\\\\\\\\
000755783 007__ cr\cn\nnnunnun
000755783 008__ 160608s2016\\\\ne\\\\\\ob\\\\000\0\eng\d
000755783 019__ $$a951527573$$a951595066
000755783 020__ $$a9789401775977$$q(electronic book)
000755783 020__ $$a9401775974$$q(electronic book)
000755783 020__ $$z9789401775953
000755783 035__ $$aSP(OCoLC)ocn951434395
000755783 035__ $$aSP(OCoLC)951434395$$z(OCoLC)951527573$$z(OCoLC)951595066
000755783 040__ $$aN$T$$beng$$erda$$epn$$cN$T$$dGW5XE$$dIDEBK$$dEBLCP$$dAZU$$dOCLCF$$dN$T$$dYDXCP$$dCOO
000755783 049__ $$aISEA
000755783 050_4 $$aTK7871.99.M44
000755783 08204 $$a621.3841/34$$223
000755783 1001_ $$aShin, Changhwan,$$eauthor.
000755783 24510 $$aVariation-aware advanced CMOS devices and SRAM$$h[electronic resource] /$$cChanghwan Shin.
000755783 264_1 $$aDordrecht :$$bSpringer,$$c2016.
000755783 300__ $$a1 online resource.
000755783 336__ $$atext$$btxt$$2rdacontent
000755783 337__ $$acomputer$$bc$$2rdamedia
000755783 338__ $$aonline resource$$bcr$$2rdacarrier
000755783 4901_ $$aSpringer series in advanced microelectronics ;$$vvolume 56
000755783 504__ $$aIncludes bibliographical references.
000755783 5050_ $$a1 Introduction: Barriers Preventing CMOS Device Technology from Moving Forward; 1.1 Introduction; 1.2 Overview of the Metal Oxide Semiconductor Field Effect Transistor (MOSFET); 1.2.1 Energy Crisis in MOSFET; 1.2.2 Thin Body MOSFETs Allow CMOS Technology to Move Forward Aggressively; 1.2.3 A New Class of Switch Enables CMOS Technology to Move Forward; 1.3 Process-Induced Variation; 1.3.1 Process-Induced Systematic Variation; 1.3.2 Process-Induced Random Variation; References; Understanding of Process-Induced Random Variation; 2 Line Edge Roughness (LER); 2.1 Introduction
000755783 5058_ $$a2.2 Physical Origin of Line Edge Roughness2.2.1 LER of Mask Patterns; 2.2.2 Variations in the Dose of Light Exposure; 2.2.3 LER Generation in Chemically Amplified (CA) Resists; 2.2.4 Intrinsic Roughness of the Resist; 2.3 Characterization of Line Edge Roughness; 2.3.1 Line Edge Roughness (LER); 2.3.2 Line Width Roughness (LWR); 2.4 Impact of Double Patterning on Line Edge Roughness; 2.4.1 Double Pattern and Double Etching; 2.4.2 Self-aligned Double Patterning; References; 3 Random Dopant Fluctuation (RDF); 3.1 Introduction; 3.2 Physical Origin of Random Dopant Fluctuation
000755783 5058_ $$a3.2.1 Ion Implantation Step3.2.2 Annealing Step for Repairing Damage and Activating Impurities; 3.3 Characterization of Random Dopant Fluctuation (RDF); 3.3.1 Kinetic Monte Carlo (KMC) Simulation; 3.3.1.1 Kinetic Monte Carlo Process for Random Discrete Dopant Distribution; 3.3.1.2 Continuous Electric Potential for Calculating the Drift-Diffusion Equation; 3.3.1.3 Device Simulation Using Drift-Diffusion Transport; 3.3.2 Analytical Model; References; 4 Work Function Variation (WFV); 4.1 Introduction; 4.2 The Physical Origins of WFV; 4.2.1 Characteristics of Metal Grains
000755783 5058_ $$a4.2.2 Dependence of the Metal Work Function on the Grain Orientation4.2.3 Impact of WFV on VTH Variation; 4.3 Characterization of WFV; 4.3.1 Statistical Analysis; 4.3.2 Ratio of Average Grain Size to Gate Area (RGG); References; Variation-Aware Advanced CMOS Devices; 5 Tri-Gate MOSFET; 5.1 Introduction; 5.2 RDF in Tri-Gate MOSFET; 5.3 LER in Tri-Gate MOSFET; 5.4 WFV in Tri-Gate MOSFET; References; 6 Quasi-Planar Trigate (QPT) Bulk MOSFET; 6.1 QPT Bulk MOSFET; 6.2 Fabrication of a QPT Bulk MOSFET; 6.3 Results and Discussion
000755783 5058_ $$a6.3.1 Improved Performance in QPT Bulk MOSFET (Vs. Conventional MOSFET)6.3.2 Suppressed VT Variation by the QPT Structure; 6.3.3 Improved Short Channel Effect in the QPT Bulk MOSFET; 6.3.4 Increased Narrow Width Effect in the QPT Bulk MOSFET; 6.3.5 A Compact Model for the QPT Bulk MOSFET; 6.4 Benefits of the Quasi-Planar Bulk CMOS Technology for 6T-SRAM; 6.4.1 Yield Enhancement in the QPT-Based 6-T SRAM Bit Cells; 6.4.2 Scaling of the Power Supply Voltage (VDD); References; 7 Tunnel FET (TFET); 7.1 Introduction; 7.2 Random Dopant Fluctuation (RDF) in TFET
000755783 506__ $$aAccess limited to authorized users.
000755783 520__ $$aThis book provides a comprehensive overview of contemporary issues in complementary metal-oxide semiconductor (CMOS) device design, describing how to overcome process-induced random variations such as line-edge-roughness, random-dopant-fluctuation, and work-function variation, and the applications of novel CMOS devices to cache memory (or Static Random Access Memory, SRAM). The author places emphasis on the physical understanding of process-induced random variation as well as the introduction of novel CMOS device structures and their application to SRAM. The book outlines the technical predicament facing state-of-the-art CMOS technology development, due to the effect of ever-increasing process-induced random/intrinsic variation in transistor performance at the sub-30-nm technology nodes. Therefore, the physical understanding of process-induced random/intrinsic variations and the technical solutions to address these issues plays a key role in new CMOS technology development. This book aims to provide the reader with a deep understanding of the major random variation sources, and the characterization of each random variation source. Furthermore, the book presents various CMOS device designs to surmount the random variation in future CMOS technology, emphasizing the applications to SRAM.
000755783 588__ $$aOnline resource; title from PDF title page (SpringerLink, viewed June 16, 2016).
000755783 650_0 $$aMetal oxide semiconductors, Complementary.
000755783 650_0 $$aRandom access memory.
000755783 77608 $$iPrint version:$$aShin, Changhwan$$tVariation-Aware Advanced CMOS Devices and SRAM$$dDordrecht : Springer Netherlands,c2016$$z9789401775953
000755783 830_0 $$aSpringer series in advanced microelectronics ;$$v56.
000755783 852__ $$bebk
000755783 85640 $$3SpringerLink$$uhttps://univsouthin.idm.oclc.org/login?url=http://link.springer.com/10.1007/978-94-017-7597-7$$zOnline Access$$91397441.1
000755783 909CO $$ooai:library.usi.edu:755783$$pGLOBAL_SET
000755783 980__ $$aEBOOK
000755783 980__ $$aBIB
000755783 982__ $$aEbook
000755783 983__ $$aOnline
000755783 994__ $$a92$$bISE