Linked e-resources
Details
Table of Contents
Preface; Contents; Contributors; Introduction; 1 Features, Principles and Development of Ferroelectric-Gate Field-Effect Transistors; Abstract; 1.1 Background of Ferroelectric Memories; 1.1.1 Historical Background; 1.1.2 Classification of Non-volatile Ferroelectric Memories; 1.2 Degradation and Improvement of Memorized States in MFIS Structures; 1.2.1 Degradation of Memorized States; 1.2.2 Theoretical Analysis of the Band Profile and Retention Degradation of MFIS Capacitors; 1.2.3 Calculated Time Dependences of Band Profile and Capacitance of the MFIS Structure
1.2.4 Effects of Currents Through the Ferroelectric and Insulator Layers on the Retention Characteristics of the MFIS Structure1.2.5 Methods for Suppressing Leakage Current Through the MFIS Structure; 1.2.6 Retention Improvement by Heat and Radical Treatments; 1.3 Improvement of Ferroelectric Gate FETs; 1.3.1 1T2C-Type FET; 1.3.2 MFMIS FET; 1.3.3 High-k Insulating Layer; 1.3.4 New Materials; 1.4 Conclusion; Acknowledgments; References; Practical Characteristics of Inorganic Ferroelectric-Gate FETs: Si-Based Ferroelectric-Gate Field Effect Transistors
2 Development of High-Endurance and Long-Retention FeFETs of Pt/CaySr1−y Bi2Ta2O9/(HfO2)x(Al2O3)1−x/Si Gate StacksAbstract; 2.1 Introduction; 2.2 Basic Fabrication Process and Characterization of Pt/SBT/HAO/Si FeFETs; 2.2.1 Fabrication Process; 2.2.2 Static Memory Window; 2.2.3 Retention; 2.2.4 Endurance; 2.2.5 Writing Speed; 2.2.6 Id-Vg and Retention at Elevated Temperatures; 2.3 Requirements to the Layers in MFIS; 2.3.1 Requirements to the Layers M, F, I; 2.3.2 Requirements Especially to the I-and-IL Layers; 2.4 Preparation of HAO for Pt/SBT/HAO/Si Gate Stack
2.4.1 Single HAO(x) and the MIS Characters at Various Composition Ratios2.4.2 Comparison of O2 and N2 Ambient in Depositing HAO; 2.4.3 Effect of N2 Ambient Pressure Increase in Depositing HAO; 2.5 Nitriding and Oxinitriding Si of MFIS FeFET; 2.5.1 Direct Nitriding Si for Large Memory Window of FeFET; 2.5.2 Oxinitriding Si for Improving the Si Interface of FeFET; 2.6 Using CSBT Instead of SBT in FeFET; 2.7 Summary; Acknowledgments; References; 3 Nonvolatile Field-Effect Transistors Using Ferroelectric Doped HfO2 Films; Abstract; 3.1 Introduction; 3.2 FeFET Integration
3.2.1 Ferroelectric Doped HfO23.2.2 Si Doped HfO2; 3.2.3 Other Doped HfO2; 3.3 Memory Properties of Ferroelectric Hafnium Oxide; 3.4 Hafnium Oxide Based Ferroelectric Field Effect Transistor; 3.4.1 Device Performance; 3.4.2 Device Reliability; 3.5 Summary and Outlook; Acknowledgments; References; Practical Characteristics of Inorganic Ferroelectric-Gate FETs: Thin Film-Based Ferroelectric-Gate Field Effect Transistors; 4 Oxide-Channel Ferroelectric-Gate Thin Film Transistors with Nonvolatile Memory Function; Abstract; 4.1 Introduction; 4.2 Features of Ferroelectric Gate Insulator
1.2.4 Effects of Currents Through the Ferroelectric and Insulator Layers on the Retention Characteristics of the MFIS Structure1.2.5 Methods for Suppressing Leakage Current Through the MFIS Structure; 1.2.6 Retention Improvement by Heat and Radical Treatments; 1.3 Improvement of Ferroelectric Gate FETs; 1.3.1 1T2C-Type FET; 1.3.2 MFMIS FET; 1.3.3 High-k Insulating Layer; 1.3.4 New Materials; 1.4 Conclusion; Acknowledgments; References; Practical Characteristics of Inorganic Ferroelectric-Gate FETs: Si-Based Ferroelectric-Gate Field Effect Transistors
2 Development of High-Endurance and Long-Retention FeFETs of Pt/CaySr1−y Bi2Ta2O9/(HfO2)x(Al2O3)1−x/Si Gate StacksAbstract; 2.1 Introduction; 2.2 Basic Fabrication Process and Characterization of Pt/SBT/HAO/Si FeFETs; 2.2.1 Fabrication Process; 2.2.2 Static Memory Window; 2.2.3 Retention; 2.2.4 Endurance; 2.2.5 Writing Speed; 2.2.6 Id-Vg and Retention at Elevated Temperatures; 2.3 Requirements to the Layers in MFIS; 2.3.1 Requirements to the Layers M, F, I; 2.3.2 Requirements Especially to the I-and-IL Layers; 2.4 Preparation of HAO for Pt/SBT/HAO/Si Gate Stack
2.4.1 Single HAO(x) and the MIS Characters at Various Composition Ratios2.4.2 Comparison of O2 and N2 Ambient in Depositing HAO; 2.4.3 Effect of N2 Ambient Pressure Increase in Depositing HAO; 2.5 Nitriding and Oxinitriding Si of MFIS FeFET; 2.5.1 Direct Nitriding Si for Large Memory Window of FeFET; 2.5.2 Oxinitriding Si for Improving the Si Interface of FeFET; 2.6 Using CSBT Instead of SBT in FeFET; 2.7 Summary; Acknowledgments; References; 3 Nonvolatile Field-Effect Transistors Using Ferroelectric Doped HfO2 Films; Abstract; 3.1 Introduction; 3.2 FeFET Integration
3.2.1 Ferroelectric Doped HfO23.2.2 Si Doped HfO2; 3.2.3 Other Doped HfO2; 3.3 Memory Properties of Ferroelectric Hafnium Oxide; 3.4 Hafnium Oxide Based Ferroelectric Field Effect Transistor; 3.4.1 Device Performance; 3.4.2 Device Reliability; 3.5 Summary and Outlook; Acknowledgments; References; Practical Characteristics of Inorganic Ferroelectric-Gate FETs: Thin Film-Based Ferroelectric-Gate Field Effect Transistors; 4 Oxide-Channel Ferroelectric-Gate Thin Film Transistors with Nonvolatile Memory Function; Abstract; 4.1 Introduction; 4.2 Features of Ferroelectric Gate Insulator