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000761329 019__ $$a959424873$$a961002654
000761329 020__ $$a9783319432205$$q(electronic book)
000761329 020__ $$a3319432206$$q(electronic book)
000761329 020__ $$z3319432184
000761329 020__ $$z9783319432182
000761329 035__ $$aSP(OCoLC)ocn958865088
000761329 035__ $$aSP(OCoLC)958865088$$z(OCoLC)959424873$$z(OCoLC)961002654
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000761329 049__ $$aISEA
000761329 050_4 $$aTK7874
000761329 08204 $$a621.381$$223
000761329 1001_ $$aBorja, Juan Pablo,$$eauthor.
000761329 24510 $$aDielectric breakdown in gigascale electronics$$h[electronic resource] :$$btime dependent failure mechanisms /$$cJuan Pablo Borja, Toh-Ming Lu, Joel Plawsky.
000761329 260__ $$aCham, Switzerland :$$bSpringer,$$c2016.
000761329 300__ $$a1 online resource.
000761329 4901_ $$aSpringerBriefs in materials
000761329 504__ $$aIncludes bibliographical references and index.
000761329 5050_ $$aIntroduction -- General Theories -- Measurement Tools and Test Structures -- Experimental Techniques -- Breakdown Experiments -- Kinetics of Charge Carrier Confinement in Thin Dielectrics -- Theory of Dielectric Breakdown in Nanoporous Thin Films -- Dielectric Breakdown in Copper Interconnects -- Reconsidering Conventional Models.
000761329 506__ $$aAccess limited to authorized users.
000761329 520__ $$aThis book focuses on the experimental and theoretical aspects of the time-dependent breakdown of advanced dielectric films used in gigascale electronics. Coverage includes the most important failure mechanisms for thin low-k films, new and established experimental techniques, recent advances in the area of dielectric failure, and advanced simulations/models to resolve and predict dielectric breakdown, all of which are of considerable importance for engineers and scientists working on developing and integrating present and future chip architectures. The book is specifically designed to aid scientists in assessing the reliability and robustness of electronic systems employing low-k dielectric materials such as nano-porous films. Similarly, the models presented here will help to improve current methodologies for estimating the failure of gigascale electronics at device operating conditions from accelerated lab test conditions. Numerous graphs, tables, and illustrations are included to facilitate understanding of the topics. Readers will be able to understand dielectric breakdown in thin films along with the main failure modes and characterization techniques. In addition, they will gain expertise on conventional as well as new field acceleration test models for predicting long term dielectric degradation.
000761329 588__ $$aOnline resource, title from PDF title page (viewed September 25, 2016)
000761329 650_0 $$aMicroelectronics$$xMaterials.
000761329 650_0 $$aInterfaces (Physical sciences)
000761329 7001_ $$aLu, Toh-Ming,$$eauthor.
000761329 7001_ $$aPlawsky, Joel,$$eauthor.
000761329 77608 $$iPrint version:$$z3319432184$$z9783319432182$$w(OCoLC)952788340
000761329 830_0 $$aSpringerBriefs in materials.
000761329 852__ $$bebk
000761329 85640 $$3SpringerLink$$uhttps://univsouthin.idm.oclc.org/login?url=http://link.springer.com/10.1007/978-3-319-43220-5$$zOnline Access$$91397441.1
000761329 909CO $$ooai:library.usi.edu:761329$$pGLOBAL_SET
000761329 980__ $$aEBOOK
000761329 980__ $$aBIB
000761329 982__ $$aEbook
000761329 983__ $$aOnline
000761329 994__ $$a92$$bISE