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Table of Contents
1 Properties and advantages of gallium nitride; Daisuke Ueda
2 Substrate issues and epitaxial growth; Stacia Keller
3 GaN-on-Silicon CMOS compatible process; Denis Marcon
4 Lateral GaN-based power devices; Umesh Mishra
5 GaN-based vertical transistors; Srabanti Chowduri
6 GaN-based nanowire transistors; Tomas Palacios
7 Deep level characterization: electrical and optical methods; Robert Kaplar
8 Modeling of GaN HEMTs: from device-level simulation to virtual prototyping; Gilberto Curatola, Giovanni Verzellesi
9 Performance-limiting defects in GaN-based HEMTs: from surface states to common impurities; Bisi, Rossetto, De Santi, Meneghini, Meneghesso, Zanoni
10 Cascode configuration for normally-off devices; Primit Parikh
11 Gate injection transistors: E-mode operation and conductivity modulation; Tetsuso Ueda
12 Fluorine implanted E-mode transistors; Kevin Chen
13 Drift effects in GaN HV power transistors; Joachim Wuerfl
14 Reliability Aspects of 650V rated GaN Power Devices; P. Moens, A. Banerjee
15 Switching Characteristics of Gallium-Nitride Transistors: system level issues; Fred Lee, Qiang Li, Xiucheng Huang and Zhengyang Liu.
2 Substrate issues and epitaxial growth; Stacia Keller
3 GaN-on-Silicon CMOS compatible process; Denis Marcon
4 Lateral GaN-based power devices; Umesh Mishra
5 GaN-based vertical transistors; Srabanti Chowduri
6 GaN-based nanowire transistors; Tomas Palacios
7 Deep level characterization: electrical and optical methods; Robert Kaplar
8 Modeling of GaN HEMTs: from device-level simulation to virtual prototyping; Gilberto Curatola, Giovanni Verzellesi
9 Performance-limiting defects in GaN-based HEMTs: from surface states to common impurities; Bisi, Rossetto, De Santi, Meneghini, Meneghesso, Zanoni
10 Cascode configuration for normally-off devices; Primit Parikh
11 Gate injection transistors: E-mode operation and conductivity modulation; Tetsuso Ueda
12 Fluorine implanted E-mode transistors; Kevin Chen
13 Drift effects in GaN HV power transistors; Joachim Wuerfl
14 Reliability Aspects of 650V rated GaN Power Devices; P. Moens, A. Banerjee
15 Switching Characteristics of Gallium-Nitride Transistors: system level issues; Fred Lee, Qiang Li, Xiucheng Huang and Zhengyang Liu.