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Contributors; 1 Progress and Prospect of Growth of Wide-Band-Gap Group III Nitrides; 1.1 History of III-V Research (1950s-1970s); 1.2 Dawn of GaN Research (1970s to Mid-1980s); 1.3 Low-Temperature-Deposited Buffer Layer, p-Type GaN and Highly Luminescent InGaN (Late 1980s); 1.4 Summary; Acknowledgements; References; 2 Ultra-Efficient Solid-State Lighting: Likely Characteristics, Economic Benefits, Technological Approaches; Abstract; 2.1 Some Likely Characteristics of Ultra-efficient ( greaterthan 70%) SSL; 2.2 The Ultimate SSL Source is Spiky; 2.2.1 Spiky Spectra Give Good CRI
2.2.2 Spiky Spectra Give the Highest MWLERs2.3 Economic Benefits of Ultra-Efficient SSL; 2.3.1 Scenario 1: Light Is not a Factor of Production; 2.3.2 Scenario 2: Light is a Factor of Production; 2.3.3 A Qualified Nod to Scenario 2: More Light = More Productivity; 2.4 Two Competing Approaches: Low- and High-Power Densities; 2.4.1 Low-Power-Density Approach (LEDs); 2.4.2 High-Power-Density Approach; 2.5 Summary; Acknowledgements; References; 3 LEDs Based on Heteroepitaxial GaN on Si Substrates; 3.1 Introduction; 3.2 Epitaxial Growth and Characterization; 3.2.1 GaN Growth on Sapphire
3.2.2 GaN Growth on SiC3.2.3 GaN/Si Using Low Temperature (LT) Intermediate Layers; 3.2.4 GaN/Si Using High-Temperature (HT) AlN/AlGaN Intermediate Layers; 3.2.5 GaN/Si Using HT Intermediate Layers (ILs) and Multilayers (MLs); 3.2.6 GaN/Si Using SLS Interlayers; 3.2.7 Recent Progress of the Growth of GaN/Si; 3.2.8 Other Epitaxial Growth Methods; 3.3 Fabrication of LEDs and Their Performances; 3.3.1 Device Characteristics of LED Structures with HT-AlN/AlGaN Intermediate Layers [75-79]; 3.3.2 Effect of Thin AlN Intermediate Layers and AlN/GaN MLs [35, 82-89]
3.3.3 Wafer Bonding and Lift-Off [90]3.3.4 Effect of the Insertion of SLS Layers [110-112]; 3.3.5 Other Structures; 3.4 Conclusion; Acknowledgements; References; 4 Epitaxial Growth of GaN on Patterned Sapphire Substrates; Abstract; 4.1 Introduction; 4.2 Properties and Fabrication of PSSs; 4.3 Growth of GaN on PSS, and Properties of GaN-LEDs on PSS; 4.3.1 SAG and ELO; 4.3.2 GaN Growth on PSS and the Mechanism of Decreasing Dislocation Density by ELO; 4.3.3 Characteristics of LEDs Grown on PSS
4.4 The Principle of Light Extraction Efficiency Improvement of GaN-Based LEDs by Patterned Sapphire Substrate4.4.1 Impact of Surface Structure of LEDs on Light Extraction Efficiency Improvement; 4.4.2 The Principle of Light Extraction Efficiency Improvement of GaN-Based LEDs by Patterned Sapphire Substrate; 4.4.3 Development of PSS with Micrometer-Sized Structures; 4.4.4 Development of PSS with Sub-micrometer-Sized Structures; 4.5 Novel Application of PSS to Growth of Nonpolar or Semipolar GaN; 4.6 Summary; References; 5 Growth and Optical Properties of GaN-Based Non- and Semipolar LEDs
2.2.2 Spiky Spectra Give the Highest MWLERs2.3 Economic Benefits of Ultra-Efficient SSL; 2.3.1 Scenario 1: Light Is not a Factor of Production; 2.3.2 Scenario 2: Light is a Factor of Production; 2.3.3 A Qualified Nod to Scenario 2: More Light = More Productivity; 2.4 Two Competing Approaches: Low- and High-Power Densities; 2.4.1 Low-Power-Density Approach (LEDs); 2.4.2 High-Power-Density Approach; 2.5 Summary; Acknowledgements; References; 3 LEDs Based on Heteroepitaxial GaN on Si Substrates; 3.1 Introduction; 3.2 Epitaxial Growth and Characterization; 3.2.1 GaN Growth on Sapphire
3.2.2 GaN Growth on SiC3.2.3 GaN/Si Using Low Temperature (LT) Intermediate Layers; 3.2.4 GaN/Si Using High-Temperature (HT) AlN/AlGaN Intermediate Layers; 3.2.5 GaN/Si Using HT Intermediate Layers (ILs) and Multilayers (MLs); 3.2.6 GaN/Si Using SLS Interlayers; 3.2.7 Recent Progress of the Growth of GaN/Si; 3.2.8 Other Epitaxial Growth Methods; 3.3 Fabrication of LEDs and Their Performances; 3.3.1 Device Characteristics of LED Structures with HT-AlN/AlGaN Intermediate Layers [75-79]; 3.3.2 Effect of Thin AlN Intermediate Layers and AlN/GaN MLs [35, 82-89]
3.3.3 Wafer Bonding and Lift-Off [90]3.3.4 Effect of the Insertion of SLS Layers [110-112]; 3.3.5 Other Structures; 3.4 Conclusion; Acknowledgements; References; 4 Epitaxial Growth of GaN on Patterned Sapphire Substrates; Abstract; 4.1 Introduction; 4.2 Properties and Fabrication of PSSs; 4.3 Growth of GaN on PSS, and Properties of GaN-LEDs on PSS; 4.3.1 SAG and ELO; 4.3.2 GaN Growth on PSS and the Mechanism of Decreasing Dislocation Density by ELO; 4.3.3 Characteristics of LEDs Grown on PSS
4.4 The Principle of Light Extraction Efficiency Improvement of GaN-Based LEDs by Patterned Sapphire Substrate4.4.1 Impact of Surface Structure of LEDs on Light Extraction Efficiency Improvement; 4.4.2 The Principle of Light Extraction Efficiency Improvement of GaN-Based LEDs by Patterned Sapphire Substrate; 4.4.3 Development of PSS with Micrometer-Sized Structures; 4.4.4 Development of PSS with Sub-micrometer-Sized Structures; 4.5 Novel Application of PSS to Growth of Nonpolar or Semipolar GaN; 4.6 Summary; References; 5 Growth and Optical Properties of GaN-Based Non- and Semipolar LEDs