Growing graphene on semiconductors / Nunzio Motta.

Cover ; Half Title ; Title ; Copyrights ; Contents; Preface ; Chapter 1. The Significance and Challenges of Direct Growth of Graphene on Semiconductor Surfaces; 1.1 Introduction; 1.2 Direct Growth of Graphene on Si Substrates ; 1.2.1 Laser Direct Growth ; 1.2.2 Carbon Ion Implantation ; 1.2.3 MBE Growth ; 1.3 Thermal Decomposition of Bulk SiC

1.4 Graphene on Silicon through Heteroepitaxial 3C-SiC 1.4.1 Thermal Decomposition of 3C-SiC on Si ; 1.4.2 Metal-Mediated Graphene Growth ; 1.5 Conclusions ; Chapter 2. Graphene Synthesized on Cubic-SiC(001) in Ultrahigh Vacuum: Atomic and Electronic Structure and Transport Properties; 2.1 Introduction; 2.2 Synthesis of Few-Layer Graphene

2.2.1 Methods of Graphene Fabrication 2.2.2 Growth of Cubic-SiC Epilayers on Standard Si Wafers ; 2.2.3 Synthesis of the Epitaxial Graphene Layers on (111)- and (011)-Oriented Cubic-SiC Films Grown on Si Wafers

2.3 Synthesis and Characterization of Continuous Few-Layer Graphene on Cubic-SiC(001 2.3.1 Step-by-Step Characterization of SiC(001) Surface during Graphene Synthesis in Ultrahigh Vacuum ; 2.3.2 Atomic and Electronic Structure of the Trilayer Graphene Synthesized on SiC(001

2.3.3 Influence of the SiC(001)-c(2×2) Atomic Structure on the Graphene Nanodomain Network 2.4 Nanodomains with Self-Aligned Boundaries on Vicinal SiC(001)/Si(001) Wafers ; 2.4.1 LEEM and Raman Studies of Graphene/SiC(001)/4°-off Si(001