TY  - GEN
DO  - 10.1007/978-3-319-66607-5
DO  - doi
T1  - Growth of high permittivity dielectrics by high pressure sputtering from metallic targets /
DA  - 2017.
CY  - Cham :
AU  - Pampillón Arce, María Ángela.
CN  - SpringerLink
CN  - TK7871.99.M44
PB  - Springer,
PP  - Cham :
PY  - 2017.
N1  - "Doctoral thesis accepted by the Complutense University of Madrid, Spain."
ID  - 801138
KW  - Metal oxide semiconductor field-effect transistors.
SN  - 9783319666075
SN  - 331966607X
TI  - Growth of high permittivity dielectrics by high pressure sputtering from metallic targets /
LK  - https://univsouthin.idm.oclc.org/login?url=http://link.springer.com/10.1007/978-3-319-66607-5
UR  - https://univsouthin.idm.oclc.org/login?url=http://link.springer.com/10.1007/978-3-319-66607-5
ER  -