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000801138 019__ $$a1005892893
000801138 020__ $$a9783319666075$$q(electronic book)
000801138 020__ $$a331966607X$$q(electronic book)
000801138 020__ $$z9783319666068
000801138 020__ $$z3319666061
000801138 0247_ $$a10.1007/978-3-319-66607-5$$2doi
000801138 035__ $$aSP(OCoLC)on1013509222
000801138 035__ $$aSP(OCoLC)1013509222$$z(OCoLC)1005892893
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000801138 049__ $$aISEA
000801138 050_4 $$aTK7871.99.M44
000801138 08204 $$a621.3815/284$$223
000801138 1001_ $$aPampillón Arce, María Ángela.
000801138 24510 $$aGrowth of high permittivity dielectrics by high pressure sputtering from metallic targets /$$cMaría Ángela Pampillón Arce.
000801138 260__ $$aCham :$$bSpringer,$$c2017.
000801138 300__ $$a1 online resource.
000801138 336__ $$atext$$btxt$$2rdacontent
000801138 337__ $$acomputer$$bc$$2rdamedia
000801138 338__ $$aonline resource$$bcr$$2rdacarrier
000801138 4901_ $$aSpringer theses
000801138 500__ $$a"Doctoral thesis accepted by the Complutense University of Madrid, Spain."
000801138 504__ $$aIncludes bibliographical references.
000801138 5050_ $$aIntroduction -- Fabrication Techniques -- Characterization Techniques -- Thermal Oxidation of Gd2o3 -- Plasma Oxidation of Gd2o3 and Sc2o3 -- Gadolinium Scandate -- Interface Scavenging -- Gd2o3 on Inp Substrates -- Conclusions and Future Work.
000801138 506__ $$aAccess limited to authorized users.
000801138 588__ $$aDescription based on print version record.
000801138 650_0 $$aMetal oxide semiconductor field-effect transistors.
000801138 77608 $$iPrint version:$$z9783319666068$$z3319666061$$w(OCoLC)994640042
000801138 830_0 $$aSpringer theses.
000801138 85280 $$bebk$$hSpringerLink
000801138 85640 $$3SpringerLink$$uhttps://univsouthin.idm.oclc.org/login?url=http://link.springer.com/10.1007/978-3-319-66607-5$$zOnline Access$$91397441.1
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000801138 980__ $$aEBOOK
000801138 980__ $$aBIB
000801138 982__ $$aEbook
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