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Table of Contents
Preface; Organization of This Book; Acknowledgements; Contents; Abbreviations; About the Authors; Part I: Basics; Chapter 1: Introduction; 1.1 The Semiconductor Industry; 1.2 Mooreś Law and Its Corollaries; 1.3 Aim and Scope of This Book; References; Chapter 2: Overview of Logic CMOS Devices; 2.1 Basic CMOS Devices and Processes; 2.1.1 Diodes; 2.1.2 Capacitors; 2.1.3 Resistors; 2.1.4 Bipolar Transistors; 2.1.5 MOSFETs; 2.2 Physics of Diodes; 2.2.1 The p-n JunctionDiode; 2.2.2 Current-Voltage Characteristics; 2.2.3 Junction Breakdowns; 2.2.4 Schottky Diodes.
2.3 MOS Capacitors and Oxide Device Physics2.3.1 MOS Capacitors; 2.3.2 Gate Tunneling Current; 2.3.3 Oxide Reliability; 2.4 MOSFET Physics; 2.4.1 Basic Long-Channel MOSFET Equations; 2.4.2 Capacitances of MOSFET; 2.4.3 Nonideal Effects; 2.4.4 Hot Carrier Reliability of MOSFET; 2.5 CMOS Circuits and Power Consumption; 2.6 Non-logic CMOS Devices Discussed in This Book; References; Chapter 3: Overview of Logic CMOS Processes; 3.1 Generic Logic CMOS Processes; 3.1.1 Introduction; 3.1.2 Process Flow and Mask Design; 3.2 Layout and Mask Generation; 3.3 Design Rules.
3.4 Extension of Logic CMOS Processes3.5 Process Control; 3.6 Postprocessing; 3.6.1 Dicing; 3.6.2 3D IC Integration and Through Silicon Via; 3.7 Wafer Processing Economics; 3.7.1 Wafer Processing Cost; 3.7.2 Yield; 3.7.3 Cost of Chips; References; Part II: Non-logic Device Design in Logic Processes; Chapter 4: Non-logic MOSFETs in Logic CMOS Processes; 4.1 Introduction; 4.2 MOSFETs with Nonstandard Threshold Voltages; 4.2.1 Bandgap-Engineered MOSFETs; 4.2.2 Bandgap FET Application: Voltage Reference Circuit; 4.2.3 Source-Drain-Engineered MOSFET; 4.3 High-Voltage MOSFET; 4.3.1 Introduction.
4.3.2 LDMOS4.3.3 Improving High-Voltage Performance; 4.3.4 Manufacturing Challenges; References; Chapter 5: Floating-Gate Devices in Logic CMOS Processes; 5.1 Introduction; 5.2 Floating-Gate Transistors; 5.3 Floating-Gate Capacitor; 5.4 Semifloating Embedded DRAM Cell; 5.5 Concluding Remarks; References; Chapter 6: Bipolar Transistors in Logic CMOS Processes; 6.1 Introduction; 6.2 Parasitic Bipolar Transistors; 6.3 Reference Circuits Using Parasitic BJTs; 6.4 Punchthrough Transistor; References; Chapter 7: Diodes in Logic CMOS Processes; 7.1 Introduction; 7.2 Polysilicon Diodes.
7.2.1 Polysilicon Resistors7.3 Schottky Diodes; References; Part III: Selected Applications; Chapter 8: Logic Nonvolatile Memory; 8.1 Introduction to Embedded NVM; 8.2 Logic NVM; 8.3 Programming and Erase Methods; 8.4 Memory Cell Design Considerations; 8.5 Memory Arrays; 8.5.1 High-Voltage Generators; 8.5.2 Row and Column Decoders; 8.5.3 Sense Amplifiers; 8.6 Memory Reliability; 8.6.1 Data Retention; 8.6.2 Program/Erase Endurance; 8.6.3 Disturb; 8.6.4 Improving Data Retention Reliability; 8.7 An Application of LNVM; References; Chapter 9: One-Time Programmable Memories in Logic Processes.
2.3 MOS Capacitors and Oxide Device Physics2.3.1 MOS Capacitors; 2.3.2 Gate Tunneling Current; 2.3.3 Oxide Reliability; 2.4 MOSFET Physics; 2.4.1 Basic Long-Channel MOSFET Equations; 2.4.2 Capacitances of MOSFET; 2.4.3 Nonideal Effects; 2.4.4 Hot Carrier Reliability of MOSFET; 2.5 CMOS Circuits and Power Consumption; 2.6 Non-logic CMOS Devices Discussed in This Book; References; Chapter 3: Overview of Logic CMOS Processes; 3.1 Generic Logic CMOS Processes; 3.1.1 Introduction; 3.1.2 Process Flow and Mask Design; 3.2 Layout and Mask Generation; 3.3 Design Rules.
3.4 Extension of Logic CMOS Processes3.5 Process Control; 3.6 Postprocessing; 3.6.1 Dicing; 3.6.2 3D IC Integration and Through Silicon Via; 3.7 Wafer Processing Economics; 3.7.1 Wafer Processing Cost; 3.7.2 Yield; 3.7.3 Cost of Chips; References; Part II: Non-logic Device Design in Logic Processes; Chapter 4: Non-logic MOSFETs in Logic CMOS Processes; 4.1 Introduction; 4.2 MOSFETs with Nonstandard Threshold Voltages; 4.2.1 Bandgap-Engineered MOSFETs; 4.2.2 Bandgap FET Application: Voltage Reference Circuit; 4.2.3 Source-Drain-Engineered MOSFET; 4.3 High-Voltage MOSFET; 4.3.1 Introduction.
4.3.2 LDMOS4.3.3 Improving High-Voltage Performance; 4.3.4 Manufacturing Challenges; References; Chapter 5: Floating-Gate Devices in Logic CMOS Processes; 5.1 Introduction; 5.2 Floating-Gate Transistors; 5.3 Floating-Gate Capacitor; 5.4 Semifloating Embedded DRAM Cell; 5.5 Concluding Remarks; References; Chapter 6: Bipolar Transistors in Logic CMOS Processes; 6.1 Introduction; 6.2 Parasitic Bipolar Transistors; 6.3 Reference Circuits Using Parasitic BJTs; 6.4 Punchthrough Transistor; References; Chapter 7: Diodes in Logic CMOS Processes; 7.1 Introduction; 7.2 Polysilicon Diodes.
7.2.1 Polysilicon Resistors7.3 Schottky Diodes; References; Part III: Selected Applications; Chapter 8: Logic Nonvolatile Memory; 8.1 Introduction to Embedded NVM; 8.2 Logic NVM; 8.3 Programming and Erase Methods; 8.4 Memory Cell Design Considerations; 8.5 Memory Arrays; 8.5.1 High-Voltage Generators; 8.5.2 Row and Column Decoders; 8.5.3 Sense Amplifiers; 8.6 Memory Reliability; 8.6.1 Data Retention; 8.6.2 Program/Erase Endurance; 8.6.3 Disturb; 8.6.4 Improving Data Retention Reliability; 8.7 An Application of LNVM; References; Chapter 9: One-Time Programmable Memories in Logic Processes.