3D TCAD simulation for CMOS nanoeletronic devices / Yung-Chun Wu, Yi-Ruei Jhan.
Wu, Yung-Chun, author.; Jhan, Yi-Ruei, author.
2018
TK7871.99.M44
Available Online

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Title 3D TCAD simulation for CMOS nanoeletronic devices / Yung-Chun Wu, Yi-Ruei Jhan.
Author Wu, Yung-Chun, author.
ISBN 9789811030666 (electronic book)
9811030669 (electronic book)
9789811030659
DOI https://doi.org/10.1007/978-981-10-3066-6
Published Singapore : Springer, [2018].
Language English
Description 1 online resource (xiii, 330 pages) : illustrations
Item Number 10.1007/978-981-10-3066-6 doi
Call Number TK7871.99.M44
Dewey Decimal Classification 621.3815/2
Summary This book demonstrates how to use the Synopsys Sentaurus TCAD 2014 version for the design and simulation of 3D CMOS (complementary metal?oxide?semiconductor) semiconductor nanoelectronic devices, while also providing selected source codes (Technology Computer-Aided Design, TCAD). Instead of the built-in examples of Sentaurus TCAD 2014, the practical cases presented here, based on years of teaching and research experience, are used to interpret and analyze simulation results of the physical and electrical properties of designed 3D CMOSFET (metal?oxide?semiconductor field-effect transistor) nanoelectronic devices. The book also addresses in detail the fundamental theory of advanced semiconductor device design for the further simulation and analysis of electric and physical properties of semiconductor devices. The design and simulation technologies for nano-semiconductor devices explored here are more practical in nature and representative of the semiconductor industry, and as such can promote the development of pioneering semiconductor devices, semiconductor device physics, and more practically-oriented approaches to teaching and learning semiconductor engineering. The book can be used for graduate and senior undergraduate students alike, while also offering a reference guide for engineers and experts in the semiconductor industry. Readers are expected to have some preliminary knowledge of the field.
Bibliography, etc. Note Includes bibliographical references.
Access Note Access limited to authorized users.
Digital File Characteristics text file PDF
Source of Description Online resource; title from PDF title page (SpringerLink, viewed June 28, 2017).
Added Author Jhan, Yi-Ruei, author.
Available in Other Form Print version: 9789811030659
Linked Resources Online Access
Record Appears in Online Resources > Ebooks
All Resources
Introduction of Synopsys Sentaurus TCAD 2014 version software environment operation interface and tools
Simulation analysis of 2D MOSFET
Simulation analysis of 3D FinFET with LG = 15 nm
Simulation analysis of Inverter and SRAM of 3D FinFET with LG = 15 nm
Simulation analysis of GAA NWFET
Simulation analysis of Junctionless FET with LG = 10 nm
Simulation analysis of Tunnel FET
Simulation analysis of Si and Ge 3D FinFET with LG = 3 nm.

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