000823636 000__ 02383cam\a2200469I\\4500 000823636 001__ 823636 000823636 005__ 20230306143952.0 000823636 006__ m\\\\\o\\d\\\\\\\\ 000823636 007__ cr\un\nnnunnun 000823636 008__ 170920s2018\\\\gw\\\\\\ob\\\\000\0\eng\d 000823636 019__ $$a1004225436$$a1004662985$$a1008874116$$a1011791648 000823636 020__ $$a9783658192389$$q(electronic book) 000823636 020__ $$a3658192380$$q(electronic book) 000823636 020__ $$z3658192372 000823636 020__ $$z9783658192372 000823636 0247_ $$a10.1007/978-3-658-19238-9$$2doi 000823636 035__ $$aSP(OCoLC)on1004365818 000823636 035__ $$aSP(OCoLC)1004365818$$z(OCoLC)1004225436$$z(OCoLC)1004662985$$z(OCoLC)1008874116$$z(OCoLC)1011791648 000823636 040__ $$aYDX$$beng$$cYDX$$dN$T$$dGW5XE$$dNJR$$dAZU$$dOCLCF$$dCOO$$dUAB$$dU3W$$dCAUOI 000823636 049__ $$aISEA 000823636 050_4 $$aQD273 000823636 08204 $$a541/.393$$223 000823636 1001_ $$aIvanov, Alexey. 000823636 24510 $$aSilicon anodization as a structuring technique :$$bliterature review, modeling and experiments /$$cAlexey Ivanov. 000823636 260__ $$aWiesbaden, Germany :$$bSpringer Vieweg,$$c[2018] 000823636 300__ $$a1 online resource. 000823636 336__ $$atext$$btxt$$2rdacontent 000823636 337__ $$acomputer$$bc$$2rdamedia 000823636 338__ $$aonline resource$$bcr$$2rdacarrier 000823636 347__ $$atext file$$bPDF$$2rda 000823636 504__ $$aIncludes bibliographical references. 000823636 5050_ $$aSilicon Anodization: State of the Art -- Experimental, Characterization and Simulation Methods -- Microscale Study of Anodization Process -- Anodization Process as a Structuring Technique: Experiments and Simulation. 000823636 506__ $$aAccess limited to authorized users. 000823636 520__ $$aAlexey Ivanov investigates the application of a silicon anodization process as a three-dimensional structuring technique, where silicon is transformed into porous silicon as a sacrificial layer or directly dissolved in electropolishing regime. The work contains a detailed state of the art, experimental studies and modeling of the process for basic shape controlling techniques. Limitations of the developed FEM model with secondary current distribution are discussed. ​ 000823636 588__ $$aVendor-supplied metadata. 000823636 650_0 $$aElectrolytic oxidation. 000823636 650_0 $$aSilicon. 000823636 77608 $$iPrint version: $$z3658192372$$z9783658192372$$w(OCoLC)994692204 000823636 852__ $$bebk 000823636 85640 $$3SpringerLink$$uhttps://univsouthin.idm.oclc.org/login?url=http://link.springer.com/10.1007/978-3-658-19238-9$$zOnline Access$$91397441.1 000823636 909CO $$ooai:library.usi.edu:823636$$pGLOBAL_SET 000823636 980__ $$aEBOOK 000823636 980__ $$aBIB 000823636 982__ $$aEbook 000823636 983__ $$aOnline 000823636 994__ $$a92$$bISE