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Quaternary Capped In(Ga)As/GaAs Quantum Dot Infrared Photodetectors : From Materials to Devices / by Sourav Adhikary, Subhananda Chakrabarti.

Adhikary, Sourav, author.; Chakrabarti, Subhananda, author.
2018
TK7888.4
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Title
Quaternary Capped In(Ga)As/GaAs Quantum Dot Infrared Photodetectors : From Materials to Devices / by Sourav Adhikary, Subhananda Chakrabarti.
Author
Adhikary, Sourav, author.
ISBN
9789811052903 (electronic book)
9811052905
9789811052897
9811052891
DOI
https://doi.org/10.1007/978-981-10-5290-3
Published
Singapore : Springer Singapore : Imprint : Springer, 2018.
Language
English
Description
1 online resource (xiii, 63 pages) : illustrations
Item Number
10.1007/978-981-10-5290-3 doi
Call Number
TK7888.4
Dewey Decimal Classification
621.3815/2
Summary
This book introduces some alternative methods for enhancing the performance of In(Ga)As/GaAs-based quantum dot infrared photodetectors (QDIPs). In(Ga)As/GaAs-based QDIPs and focal plane array (FPA) cameras have wide application in fields such as military and space science. The core of the study uses a combination of quaternary In0.21Al0.21Ga0.58As and GaAs spacer as a capping layer on In(Ga)As/GaAs quantum dots in the active region of the detector structure. For the purposes of optimization, three types of samples growths are considered with different capping thicknesses. The results presented include TEM, XRD and photoluminescence studies that compare combination barrier thickness and its effect on structural and optical properties. Compressive strain within the heterostructure, thermal stability in high temperature annealing, spectral response, shifts in PL peaks peak, and responsivity and detectivity are all considered. The results also present a narrow spectral width that was obtained by using InAs QDs which is very useful for third generation FPA camera application. The book details effect of post-growth rapid thermal annealing on device characteristics and methods to enhance responsivity and peak detectivity. The contents of this book will be useful to researchers and professionals alike.
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Includes bibliographical references and index.
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Access limited to authorized users.
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text file PDF
Added Author
Chakrabarti, Subhananda, author.
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Quaternary Capped In(Ga)As/GaAs Quantum Dot Infrared Photodetectors.
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Chapter 1: Introduction
Chapter 2: Structural and Optical Characterization of Quaternary-Capped InAs/GaAs Quantum Dots
Chapter 3: Effect of Rapid-Thermal Annealing on Quantum Dot Properties
Chapter 4: In(Ga)As/GaAs Quantum Dot Infrared Photodetectors (QDIPs) with Quaternary Capping
Chapter 5: Effects of RTA on Quaternary Capped QDIP Characteristics
Chapter 6: Summary and Future Work.

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