Linked e-resources
Details
Table of Contents
Cover; Half title; Title; Copyright; Contents; Preface; Chapter 1 Introduction; 1.1 Era Predating the Birth of Power Semiconductor Devices; 1.2 Dawn of Power Electronics; 1.3 Japan's Leading Effort in Power Electronics; 1.4 Chronology of Power Devices in the 1980s; 1.5 Chronology of Power Modules in the 1980s; 1.6 History of Recent Power Switching Semiconductors; 1.7 Key Role of Power Devices for Efficient Power Conversion; 1.7.1 Role of Devices in Power Amplification; 1.7.2 Role of Devices in Power Switching Applications; 1.7.2.1 Power losses by power switches in power conversion electronics
Chapter 2 Basic Technologies of Major Power Devices2.1 Power Device Categories; 2.2 Key Semiconductor Operation Principles; 2.2.1 Essence of the Power Device; 2.2.2 Characteristics of the Semiconductor; 2.2.3 p-Type and n-Type Semiconductors; 2.2.4 Potential Barrier between Regions Having Different Impurity Concentrations; 2.3 Basic Operation of Power Devices; 2.3.1 Reverse Voltage Blocking; 2.3.2 Forward Conducting; 2.3.3 Voltage-Holding Ability with Large Current: SOA; 2.4 Diode Rectifiers; 2.4.1 Diode Structures; 2.4.2 Transient Operation of a pin Diode
2.4.3 Basic Operation of a pin Diode2.4.4 High-Voltage Large-Current Operation of a pin Diode; 2.5 Fast-Recovery Diode for a Typical Freewheeling Function; 2.5.1 Need for First-Recovery Diodes; 2.5.2 Effect of Lifetime Control; 2.5.3 Control Methods of the Lifetime; 2.5.4 Various Recombination Models; 2.5.5 Leakage Current Caused by Lifetime Killers; 2.5.5.1 Pair generation leakage current; 2.5.5.2 Diffusion leakage current; 2.5.6 Interpretation of Observed JF-VF Characteristics; 2.6 Devices of the Thyristor Family; 2.6.1 Thyristor; 2.6.2 GTO/GCT; 2.7 Bipolar Junction Transistors
2.7.1 BJT Structures2.7.2 Basic Operation of the BJT; 2.7.3 High-Voltage Large-Current Operation of the BJT; 2.7.4 Safe Operating Area of the BJT; 2.8 Metal-Oxide-Semiconductor Field-Effect Transistors; 2.9 Insulated Gate Bipolar Transistors; 2.9.1 IGBT Structures; 2.9.2 Basic Operation of the IGBT; 2.9.3 High-Voltage Large-Current Operation of the IGBT; 2.9.4 Safe Operating Area of the IGBT; 2.9.4.1 Observation of IGBT destructions; 2.9.4.2 Destruction mechanism of real IGBTs; Chapter 3 Applied Power Device Family: Power Modules and Intelligent Power Modules
3.1 Review of the Power Module Concept and Evolution History3.2 Power Module Constructional Features and Design Aspects; 3.2.1 Basic Aspects of Power Module Construction and Design; 3.2.1.1 What are the characteristics required from a power module package?; 3.2.1.2 What are the features and issues related to typical power module package designs?; 3.2.2 Fundamentals of Power Module Structural Reliability and Life Endurance; 3.3 State-of-the-Art Key Power Module Components; 3.3.1 Dual-in-Line Intelligent Power Module; 3.3.2 Intelligent Power Module
Chapter 2 Basic Technologies of Major Power Devices2.1 Power Device Categories; 2.2 Key Semiconductor Operation Principles; 2.2.1 Essence of the Power Device; 2.2.2 Characteristics of the Semiconductor; 2.2.3 p-Type and n-Type Semiconductors; 2.2.4 Potential Barrier between Regions Having Different Impurity Concentrations; 2.3 Basic Operation of Power Devices; 2.3.1 Reverse Voltage Blocking; 2.3.2 Forward Conducting; 2.3.3 Voltage-Holding Ability with Large Current: SOA; 2.4 Diode Rectifiers; 2.4.1 Diode Structures; 2.4.2 Transient Operation of a pin Diode
2.4.3 Basic Operation of a pin Diode2.4.4 High-Voltage Large-Current Operation of a pin Diode; 2.5 Fast-Recovery Diode for a Typical Freewheeling Function; 2.5.1 Need for First-Recovery Diodes; 2.5.2 Effect of Lifetime Control; 2.5.3 Control Methods of the Lifetime; 2.5.4 Various Recombination Models; 2.5.5 Leakage Current Caused by Lifetime Killers; 2.5.5.1 Pair generation leakage current; 2.5.5.2 Diffusion leakage current; 2.5.6 Interpretation of Observed JF-VF Characteristics; 2.6 Devices of the Thyristor Family; 2.6.1 Thyristor; 2.6.2 GTO/GCT; 2.7 Bipolar Junction Transistors
2.7.1 BJT Structures2.7.2 Basic Operation of the BJT; 2.7.3 High-Voltage Large-Current Operation of the BJT; 2.7.4 Safe Operating Area of the BJT; 2.8 Metal-Oxide-Semiconductor Field-Effect Transistors; 2.9 Insulated Gate Bipolar Transistors; 2.9.1 IGBT Structures; 2.9.2 Basic Operation of the IGBT; 2.9.3 High-Voltage Large-Current Operation of the IGBT; 2.9.4 Safe Operating Area of the IGBT; 2.9.4.1 Observation of IGBT destructions; 2.9.4.2 Destruction mechanism of real IGBTs; Chapter 3 Applied Power Device Family: Power Modules and Intelligent Power Modules
3.1 Review of the Power Module Concept and Evolution History3.2 Power Module Constructional Features and Design Aspects; 3.2.1 Basic Aspects of Power Module Construction and Design; 3.2.1.1 What are the characteristics required from a power module package?; 3.2.1.2 What are the features and issues related to typical power module package designs?; 3.2.2 Fundamentals of Power Module Structural Reliability and Life Endurance; 3.3 State-of-the-Art Key Power Module Components; 3.3.1 Dual-in-Line Intelligent Power Module; 3.3.2 Intelligent Power Module