@article{838689,
      recid = {838689},
      author = {Matsuoka, Takashi, and Kangawa, Yoshihiro,},
      title = {Epitaxial growth of III-nitride compounds : computational  approach /},
      pages = {1 online resource.},
      abstract = {This book presents extensive information on the mechanisms  of epitaxial growth in III-nitride compounds, drawing on a  state-of-the-art computational approach that combines ab  initio calculations, empirical interatomic potentials, and  Monte Carlo simulations to do so. It discusses important  theoretical aspects of surface structures and elemental  growth processes during the epitaxial growth of III-nitride  compounds. In addition, it discusses advanced fundamental  structural and electronic properties, surface structures,  fundamental growth processes and novel behavior of thin  films in III-nitride semiconductors. As such, it will  appeal to all researchers, engineers and graduate students  seeking detailed information on crystal growth and its  application to III-nitride compounds.},
      url = {http://library.usi.edu/record/838689},
      doi = {https://doi.org/10.1007/978-3-319-76641-6},
}