000838689 000__ 05711cam\a2200565Ii\4500
000838689 001__ 838689
000838689 005__ 20230306144556.0
000838689 006__ m\\\\\o\\d\\\\\\\\
000838689 007__ cr\un\nnnunnun
000838689 008__ 180423s2018\\\\sz\\\\\\ob\\\\001\0\eng\d
000838689 019__ $$a1032284427$$a1032353660$$a1032583096$$a1034549040$$a1038453337
000838689 020__ $$a9783319766416$$q(electronic book)
000838689 020__ $$a3319766414$$q(electronic book)
000838689 020__ $$z9783319766409
000838689 020__ $$z3319766406
000838689 0247_ $$a10.1007/978-3-319-76641-6$$2doi
000838689 035__ $$aSP(OCoLC)on1031999508
000838689 035__ $$aSP(OCoLC)1031999508$$z(OCoLC)1032284427$$z(OCoLC)1032353660$$z(OCoLC)1032583096$$z(OCoLC)1034549040$$z(OCoLC)1038453337
000838689 040__ $$aN$T$$beng$$erda$$epn$$cN$T$$dGW5XE$$dN$T$$dYDX$$dEBLCP$$dAZU$$dOCLCA$$dUPM$$dUAB$$dOCLCF$$dOCLCQ
000838689 049__ $$aISEA
000838689 050_4 $$aTK7871.15.N57
000838689 08204 $$a621.38152$$223
000838689 24500 $$aEpitaxial growth of III-nitride compounds :$$bcomputational approach /$$cTakashi Matsuoka, Yoshihiro Kangawa, editors.
000838689 264_1 $$aCham, Switzerland :$$bSpringer,$$c[2018]
000838689 264_4 $$c©2018
000838689 300__ $$a1 online resource.
000838689 336__ $$atext$$btxt$$2rdacontent
000838689 337__ $$acomputer$$bc$$2rdamedia
000838689 338__ $$aonline resource$$bcr$$2rdacarrier
000838689 347__ $$atext file$$bPDF$$2rda
000838689 4901_ $$aSpringer series in materials science ;$$vVolume 269
000838689 504__ $$aIncludes bibliographical references and index.
000838689 5050_ $$aIntro; Preface; Contents; Contributors; 1 Introduction; 1.1 Purpose of the Book; 1.2 Outline of the Book; References; Fundamentals of Computational Approach to Epitaxial Growth of III-Nitride Compounds; 2 Computational Methods; 2.1 Ab Initio Calculations; 2.1.1 Density-Functional Theory; 2.1.2 Plane-Wave Basis Set; 2.1.3 Ab Initio Pseudopotential Method; 2.2 Empirical Interatomic Potentials; 2.3 Monte Carlo Simulations; References; 3 Fundamental Properties of III-Nitride Compounds; 3.1 Crystal Structure and Structural Stability; 3.2 Electronic Band Structure
000838689 5058_ $$a3.3 Miscibility of III-Nitride Alloy Semiconductors3.4 Dislocation Core Structures; 3.5 Compositional Inhomogeneity Around Threading Dislocations; References; 4 Fundamental Properties of III-Nitride Surfaces; 4.1 Surface Phase Diagram Calculations; 4.2 Surface Reconstructions on III-Nitride Compounds; 4.2.1 Polar AlN\left( {0001} \right) and \left( {000\bar{1}} \right) Surfaces; 4.2.2 Nonpolar AlN\left( {1\bar{1}00} \right) and \left( {11\bar{2}0} \right) Surfaces; 4.2.3 Semipolar AlN\left( {1\bar{1}01} \right) and \left( {11\bar{2}0} \right) Surfaces
000838689 5058_ $$a4.2.4 Polar GaN\left( {0001} \right) and \left( {000\bar{1}} \right) Surfaces4.2.5 Nonpolar GaN\left( {1\bar{1}00} \right) and \left( {11\bar{2}0} \right) Surfaces; 4.2.6 Semipolar GaN\left( {1\bar{1}01} \right) and \left( {11\bar{2}0} \right) Surfaces; 4.2.7 Polar InN\left( {0001} \right) and \left( {000\bar{1}} \right) Surfaces; 4.2.8 Nonpolar InN\left( {1\bar{1}00} \right) and \left( {11\bar{2}0} \right) Surfaces; 4.2.9 Semipolar InN\left( {1\bar{1}01} \right) and \left( {11\bar{2}0} \right) Surfaces; 4.3 Hydrogen Adsorption on III-Nitride Compounds
000838689 5058_ $$a4.3.1 Structures of AlN Surfaces with Hydrogen4.3.2 Surface Phase Diagrams for Hydrogen Adsorption on AlN Surfaces; 4.3.3 Structures of GaN Surfaces with Hydrogen; 4.3.4 Surface Phase Diagrams for Hydrogen Adsorption on GaN Surfaces; 4.3.5 Structures of InN Surfaces with Hydrogen; 4.3.6 Surface Phase Diagrams for Hydrogen Adsorption on InN Surfaces; References; Applications of Computational Approach to Epitaxial Growth of III-Nitride Compounds; 5 Thermodynamic Approach to InN Epitaxy; 5.1 Thermodynamic Approach; 5.1.1 Modeling InN MOVPE; 5.1.2 Surface Energy Calculation
000838689 5058_ $$a5.2 Surface Phase Diagram of InN Under MOVPE Condition5.3 Growth of InN by Pressurized-Reactor MOVPE; References; 6 Atomic Arrangement and In Composition in InGaN Quantum Wells; 6.1 Atomic Arrangement in InGaN; 6.1.1 Stability of Tetrahedral Clusters; 6.1.2 Monte Carlo Simulation of InGaN MOVPE; 6.2 In Incorporation in InGaN QWs; 6.2.1 Effective Enthalpy of Mixing of Coherently Grown InGaN Layers; 6.2.2 Thermodynamic Analysis of InGaN Hetero-Epitaxy; References; 7 Initial Epitaxial Growth Processes of III-Nitride Compounds; 7.1 Adatom Kinetics on AlN Polar Surfaces During MOVPE
000838689 506__ $$aAccess limited to authorized users.
000838689 520__ $$aThis book presents extensive information on the mechanisms of epitaxial growth in III-nitride compounds, drawing on a state-of-the-art computational approach that combines ab initio calculations, empirical interatomic potentials, and Monte Carlo simulations to do so. It discusses important theoretical aspects of surface structures and elemental growth processes during the epitaxial growth of III-nitride compounds. In addition, it discusses advanced fundamental structural and electronic properties, surface structures, fundamental growth processes and novel behavior of thin films in III-nitride semiconductors. As such, it will appeal to all researchers, engineers and graduate students seeking detailed information on crystal growth and its application to III-nitride compounds.
000838689 588__ $$aOnline resource; title from PDF title page (SpringerLink, viewed April 24, 2018).
000838689 650_0 $$aNitrides.
000838689 650_0 $$aEpitaxy.
000838689 7001_ $$aMatsuoka, Takashi,$$d1947-$$eeditor.
000838689 7001_ $$aKangawa, Yoshihiro,$$eeditor.
000838689 77608 $$iPrint version: $$z3319766406$$z9783319766409$$w(OCoLC)1022078182
000838689 830_0 $$aSpringer series in materials science ;$$vv. 269.
000838689 852__ $$bebk
000838689 85640 $$3SpringerLink$$uhttps://univsouthin.idm.oclc.org/login?url=http://link.springer.com/10.1007/978-3-319-76641-6$$zOnline Access$$91397441.1
000838689 909CO $$ooai:library.usi.edu:838689$$pGLOBAL_SET
000838689 980__ $$aEBOOK
000838689 980__ $$aBIB
000838689 982__ $$aEbook
000838689 983__ $$aOnline
000838689 994__ $$a92$$bISE