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000839254 019__ $$a1036731080$$a1040612807
000839254 020__ $$a9783319779942$$q(electronic book)
000839254 020__ $$a331977994X$$q(electronic book)
000839254 020__ $$z9783319779935
000839254 020__ $$z3319779931
000839254 0247_ $$a10.1007/978-3-319-77994-2$$2doi
000839254 035__ $$aSP(OCoLC)on1035762062
000839254 035__ $$aSP(OCoLC)1035762062$$z(OCoLC)1036731080$$z(OCoLC)1040612807
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000839254 049__ $$aISEA
000839254 050_4 $$aTK7871.85
000839254 08204 $$a621.3815/2$$223
000839254 24500 $$aGallium nitride-enabled high frequency and high efficiency power conversion /$$cGaudenzio Meneghesso, Matteo Meneghini, Enrico Zanoni, editors.
000839254 264_1 $$aCham, Switzerland :$$bSpringer,$$c2018.
000839254 300__ $$a1 online resource (xiii, 232 pages) :$$billustrations (some color).
000839254 336__ $$atext$$btxt$$2rdacontent
000839254 337__ $$acomputer$$bc$$2rdamedia
000839254 338__ $$aonline resource$$bcr$$2rdacarrier
000839254 347__ $$atext file$$bPDF$$2rda
000839254 4901_ $$aIntegrated circuits and systems,$$x1558-9412
000839254 500__ $$aIncludes index.
000839254 5050_ $$aIntro; Preface; Introduction; Contents; 1 Taking the Next Step in GaN: Bulk GaN Substrates and GaN-on-Si Epitaxy for Electronics; 1.1 Introduction; 1.2 Brief Overview of the State of the Art of GaN Bulk Crystal Growth and Native Substrates; 1.3 Homoepitaxy on Native Substrates; 1.4 Heteroepitaxy of GaN; 1.5 Heterostructures Made from III-Nitrides: A Family of Semiconductors as a Powerful Toolbox for Device Design by Material Engineering; 1.6 Piezoelectric Field in III-Nitrides; 1.7 Metal-Organic Vapor Phase Deposition: The Most Suited Technique for III-Nitride Epilayer Deposition
000839254 5058_ $$a1.8 Buildup of Typical AlGaN/GaN Layer Structure on a Si Substrate and Pitfalls to Avoid1.8.1 The Nucleation Layer; Crystal Orientation of the Silicon Substrate; Gallium Melt-Back; AlN Microstructure; 1.8.2 The Buffer for Strain Management; 1.8.3 The Active Part of the AlGaN/GaN HEMT; 1.8.4 Capping and Surface Passivation Layers: From GaN Cap to In Situ SiN; 1.9 Conclusions; References; 2 Lateral GaN HEMT Structures; 2.1 Introduction; 2.2 The Basic GaN HEMT Device: Polarization, Surface States, and the 2DEG; 2.3 Structures for Higher Mobility; 2.4 Structures for Current Collapse Mitigation
000839254 5058_ $$a2.5 Structures for High Voltage Operation2.6 Structures for Normally Off Operation; References; 3 Vertical GaN Transistors for Power Electronics; 3.1 Introduction; 3.2 Current Aperture Vertical Electron Transistors (CAVETs); 3.2.1 Operation Principle of the CAVET; Planar CAVETs; Trench CAVET; 3.2.2 CAVET as a Power Switch; High Breakdown Voltage; Low On-State Resistance; 3.3 Switching Performance of the CAVET; 3.3.1 Discussion of the Fabrication Process; Planar CAVET with Mg-Implanted CBL; Planar CAVET with Mg-doped CBL; Planar CAVETs with Regrown Aperture Region
000839254 5058_ $$aCAVET with Aperture Region Formed by Si Ion Implantation3.3.2 Trench CAVET; Operation Principle; 3.4 MOSFETs; 3.4.1 Regrowth-Based MOSFET (OGFET); Operation Principle of the OGFET; 3.4.2 OGFET Switching Performance; 3.5 Conclusion; References; 4 Reliability of GaN-Based Power Devices; 4.1 Off-State Time-Dependent Degradation Mechanisms; 4.2 Time-Dependent Failure of Structures with P-Type Gate; 4.3 Positive and Negative Bias Threshold Voltage Instabilities in MISHEMT Structures; 4.3.1 Positive Bias Threshold Voltage Instabilities in MISHEMTs
000839254 5058_ $$a4.3.2 Negative Bias-Induced Threshold Voltage Instability4.3.3 Constant Source Current-Induced Degradation; 4.4 Conclusions; References; 5 Validating GaN Robustness; 5.1 Introduction; 5.1.1 Reliability Issues Specific to GaN Power Transistors; 5.1.2 Switching Safe Operating Area (SSOA); 5.2 Reliability Validation on Hybrid-Drain-Embedded Gate Injection Transistor (HD-GIT); 5.2.1 Device Structure; 5.2.2 Fundamental Reliability Tests; 5.2.3 Short-Time Switching Safe Operating Area (sSSOA); 5.2.4 Dynamic High-Temperature Operation Life (D-HTOL) Test
000839254 506__ $$aAccess limited to authorized users.
000839254 520__ $$aThis book demonstrates to readers why Gallium Nitride (GaN) transistors have a superior performance as compared to the already mature Silicon technology. The new GaN-based transistors here described enable both high frequency and high efficiency power conversion, leading to smaller and more efficient power systems. Coverage includes i) GaN substrates and device physics; ii) innovative GaN -transistors structure (lateral and vertical); iii) reliability and robustness of GaN-power transistors; iv) impact of parasitic on GaN based power conversion, v) new power converter architectures and vi) GaN in switched mode power conversion. Provides single-source reference to Gallium Nitride (GaN)-based technologies, from the material level to circuit level, both for power conversions architectures and switched mode power amplifiers; Demonstrates how GaN is a superior technology for switching devices, enabling both high frequency, high efficiency and lower cost power conversion; Enables design of smaller, cheaper and more efficient power supplies.
000839254 588__ $$aOnline resource; title from PDF title page (SpringerLink, viewed May 16, 2018).
000839254 650_0 $$aSemiconductors$$xMaterials.
000839254 650_0 $$aGallium nitride.
000839254 650_0 $$aTransistors.
000839254 7001_ $$aMeneghesso, Gaudenzio,$$eeditor.
000839254 7001_ $$aMeneghini, Matteo,$$eeditor.
000839254 7001_ $$aZanoni, Enrico,$$eeditor.
000839254 77608 $$iPrint version: $$z3319779931$$z9783319779935$$w(OCoLC)1023522516
000839254 830_0 $$aIntegrated circuits and systems,$$x1558-9412
000839254 852__ $$bebk
000839254 85640 $$3SpringerLink$$uhttps://univsouthin.idm.oclc.org/login?url=http://link.springer.com/10.1007/978-3-319-77994-2$$zOnline Access$$91397441.1
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000839254 980__ $$aEBOOK
000839254 980__ $$aBIB
000839254 982__ $$aEbook
000839254 983__ $$aOnline
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