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000850777 019__ $$a1053860660
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000850777 049__ $$aISEA
000850777 050_4 $$aTK7871.15.F5
000850777 08204 $$a621.3815/2$$223
000850777 1001_ $$aYi, T'ae-ho,$$eauthor.
000850777 24510 $$aFormation of KNbO3 Thin Films for Self-Powered ReRAM Devices and Artificial Synapses /$$cTae-Ho Lee.
000850777 264_1 $$aSingapore :$$bSpringer,$$c[2018]
000850777 264_4 $$c©2018
000850777 300__ $$a1 online resource.
000850777 336__ $$atext$$btxt$$2rdacontent
000850777 337__ $$acomputer$$bc$$2rdamedia
000850777 338__ $$aonline resource$$bcr$$2rdacarrier
000850777 4901_ $$aSpringer theses
000850777 500__ $$a"Doctoral Thesis accepted by Korea University, Seoul, Korea (Republic of)."
000850777 504__ $$aIncludes bibliographical references.
000850777 506__ $$aAccess limited to authorized users.
000850777 588__ $$aOnline resource; title from PDF title page (viewed  September 19, 2018).
000850777 650_0 $$aThin films$$xElectric properties.
000850777 650_0 $$aThin film devices.
000850777 650_0 $$aCrystal growth.
000850777 650_0 $$aRandom access memory.
000850777 77608 $$iPrint version: $$z9811325340$$z9789811325342$$w(OCoLC)1048116769
000850777 830_0 $$aSpringer theses.
000850777 852__ $$bebk
000850777 85640 $$3SpringerLink$$uhttps://univsouthin.idm.oclc.org/login?url=http://link.springer.com/10.1007/978-981-13-2535-9$$zOnline Access$$91397441.1
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