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000854233 020__ $$z9781119246299 
000854233 020__ $$z9781119246299
000854233 020__ $$a9781119246305 $$q(electronic book)
000854233 035__ $$a(MiAaPQ)EBC4698013
000854233 035__ $$a(Au-PeEL)EBL4698013
000854233 035__ $$a(CaPaEBR)ebr11271943
000854233 035__ $$a(CaONFJC)MIL957778
000854233 035__ $$a(OCoLC)960702309
000854233 040__ $$aMiAaPQ$$beng$$erda$$epn$$cMiAaPQ$$dMiAaPQ
000854233 050_4 $$aTK7871.95$$b.K86 2017
000854233 0820_ $$a621.3815/284$$223
000854233 1001_ $$aKumar, Mamidala Jagadesh,$$eauthor.
000854233 24510 $$aTunnel field-effect transistors (TFET) :$$bmodelling and simulations /$$cJagadesh Kumar Mamidala, Rajat Vishnoi, Pratyush Pandey.
000854233 264_1 $$aHoboken :$$bWiley,$$c2017.
000854233 300__ $$a1 online resource (208 pages) :$$billustrations
000854233 336__ $$atext$$2rdacontent
000854233 337__ $$acomputer$$2rdamedia
000854233 338__ $$aonline resource$$2rdacarrier
000854233 504__ $$aIncludes bibliographical references and index.
000854233 506__ $$aAccess limited to authorized users.
000854233 520__ $$a"This one-stop study aid to TFETs is aimed at those who are beginning their study on TFETs and also as a guide for those who wish to design circuits using TFETs. The book covers the physics behind the functioning of the TFETs and their modelling for the purpose of circuit design and circuit simulation. It begins with a brief discussion on the basic principles of quantum mechanics and then builds up to the physics behind the quantum mechanical phenomena of band-to-band tunnelling. This is followed by studying the basic functioning of the TFETs and their different structural configurations. After explaining the functioning of the TFETs, the book describes different approaches used by researchers for developing the drain current models for TFETs. Finally, to help the new researchers in the area of TFETs, the book describes the process of carrying out numerical simulations of TFETs using TCAD. Numerical simulations are helpful tools for studying the behaviour of any semiconductor device without getting into the complex process of fabrication and characterization"--$$cProvided by publisher.
000854233 588__ $$aDescription based on print version record.
000854233 650_0 $$aTunnel field-effect transistors.
000854233 650_0 $$aIntegrated circuits$$xDesign and construction.
000854233 650_0 $$aNanostructured materials.
000854233 650_0 $$aLow voltage integrated circuits.
000854233 7001_ $$aVishnoi, Rajat,$$eauthor.
000854233 7001_ $$aPandey, Pratyush,$$eauthor.
000854233 77608 $$iPrint version:$$aKumar, Mamidala Jagadesh.$$tTunnel field-effect transistors (TFET) : modelling and simulations.$$dHoboken : Wiley, 2017$$z9781119246299
000854233 852__ $$bebk
000854233 85640 $$3ProQuest Ebook Central Academic Complete$$uhttps://univsouthin.idm.oclc.org/login?url=https://ebookcentral.proquest.com/lib/usiricelib-ebooks/detail.action?docID=4698013$$zOnline Access
000854233 909CO $$ooai:library.usi.edu:854233$$pGLOBAL_SET
000854233 980__ $$aEBOOK
000854233 980__ $$aBIB
000854233 982__ $$aEbook
000854233 983__ $$aOnline