000855269 000__ 01558cam\a2200385\i\4500 000855269 001__ 855269 000855269 005__ 20210515155746.0 000855269 006__ m\\\\\o\\d\\\\\\\\ 000855269 007__ cr\un\nnnunnun 000855269 008__ 180524s2014\\\\gw\\\\\\o\\\\\000\0\eng\d 000855269 020__ $$z9783832532611 000855269 020__ $$a9783832596668 $$q(electronic book) 000855269 035__ $$a(MiAaPQ)EBC5223913 000855269 035__ $$a(Au-PeEL)EBL5223913 000855269 035__ $$a(CaPaEBR)ebr11539620 000855269 035__ $$a(OCoLC)1021809289 000855269 040__ $$aMiAaPQ$$beng$$erda$$epn$$cMiAaPQ$$dMiAaPQ 000855269 050_4 $$aTK7871.95$$b.R655 2014 000855269 0820_ $$a621.3815284$$223 000855269 1001_ $$aRoll, Guntrade,$$eauthor. 000855269 24510 $$aLeakage current and defect characterization of short channel MOSFETs /$$cGuntrade Roll. 000855269 264_1 $$aBerlin :$$bLogos Verlag Berlin,$$c[2014] 000855269 264_4 $$c©2014 000855269 300__ $$a1 online resource (242 pages). 000855269 336__ $$atext$$btxt$$2rdacontent 000855269 337__ $$acomputer$$bc$$2rdamedia 000855269 338__ $$aonline resource$$bcr$$2rdacarrier 000855269 4900_ $$aResearch at NaMLab ;$$v2 000855269 506__ $$aAccess limited to authorized users. 000855269 588__ $$aDescription based on print version record. 000855269 650_0 $$aMetal oxide semiconductor field-effect transistors. 000855269 77608 $$iPrint version:$$aRoll, Guntrade.$$tLeakage current and defect characterization of short channel MOSFETs.$$dBerlin : Logos Verlag Berlin, c2014 $$z9783832532611 000855269 852__ $$bebk 000855269 85640 $$3ProQuest Ebook Central Academic Complete$$uhttps://univsouthin.idm.oclc.org/login?url=https://ebookcentral.proquest.com/lib/usiricelib-ebooks/detail.action?docID=5223913$$zOnline Access 000855269 909CO $$ooai:library.usi.edu:855269$$pGLOBAL_SET 000855269 980__ $$aEBOOK 000855269 980__ $$aBIB 000855269 982__ $$aEbook 000855269 983__ $$aOnline