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000856791 020__ $$a9789811334443$$q(electronic book)
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000856791 050_4 $$aTK7874.85$$b.F82 2018
000856791 08204 $$a621.3815$$223
000856791 1001_ $$aFu, Mengqi.
000856791 24510 $$aElectrical properties of indium arsenide nanowires and their field-effect transistors /$$cMengqi Fu.
000856791 264_1 $$aSingapore :$$bSpringer,$$c[2018]
000856791 300__ $$a1 online resource.
000856791 336__ $$atext$$btxt$$2rdacontent
000856791 337__ $$acomputer$$bc$$2rdamedia
000856791 338__ $$aonline resource$$bcr$$2rdacarrier
000856791 4901_ $$aSpringer theses
000856791 500__ $$a"Doctoral thesis accepted by the Peking University, Beijing, China."
000856791 504__ $$aIncludes bibliographical references.
000856791 5050_ $$aIntro; Supervisor's Foreword; Abstract; Parts of this thesis have been published in the following journal articles:; Acknowledgements; Contents; 1 Introduction; 1.1 Advantages of InAs Nanowire-Based Electronic Devices; 1.1.1 Advantages of InAs Material for Fabricating High-Performance Electronic Devices; 1.1.2 Advantages of InAs Nanowires in Making Multi-gate and Gate-All-Around Devices; 1.2 Crystal Structure of InAs Nanowires; 1.3 Development Status of InAs Nanowire Electronic Devices; 1.3.1 InAs Nanowire MOSFETs; 1.3.2 InAs Nanowire TFETs
000856791 5058_ $$a1.4 Several Problems of InAs Nanowire-Based Electronic Devices1.4.1 High OFF-State Current of Devices; 1.4.2 Interface State Between InAs Nanowires and Gate Dielectric; 1.4.3 Relation Between Structure of InAs Nanowires and Their Device Performance; 1.4.4 Dispersion of Device Performance; 1.5 Topic Ideas and Chapter Arrangements; References; 2 Fabrication, Characterization and Parameter Extraction of InAs Nanowire-Based Device; 2.1 Growth of InAs Nanowires; 2.2 Characterization, Device Fabricating and Electrical Measurement Equipment of Nanowires; 2.2.1 Characterization Equipment
000856791 5058_ $$a2.2.2 Apparatus for Device Fabrication2.2.3 Apparatus to Characterize the Electrical Properties of Devices; 2.3 Fabrication Processes of InAs Nanowires Devices; 2.3.1 Dispersion and Transfer of InAs Nanowires; 2.3.2 General Fabrication Process for Planar InAs Nanowire Devices; 2.3.3 Fabrication Process for Suspended InAs Nanowire Devices; 2.4 Measurement and Characterization of InAs Nanowire Devices; 2.5 Extraction of Basic Electrical Parameters of InAs Nanowires Based on FETs; References; 3 The Impact of Quantum Confinement Effects on Electrical Properties of InAs Nanowires
000856791 5058_ $$a3.1 Growth of Ultrathin InAs Nanowire3.2 High-Performance Device Based on Ultrathin InAs Nanowires; 3.3 Influences of Diameter on the InAs Nanowire Devices; 3.3.1 Influences of Diameter on the OFF-State Performance of InAs Nanowire Devices; 3.3.2 Larger Bandgap Induced by Smaller Diameter of InAs Nanowires; 3.3.3 Influence of Diameter on ON-State Performance of InAs Nanowire Devices; 3.4 Summary; References; 4 Influence of Crystal Phase and Orientation on Electrical Properties of InAs Nanowires; 4.1 Growth of InAs Nanowires in Different Orientations
000856791 5058_ $$a4.2 Method of Transferring Nanowires in Devices to TEM for Structural Characterization4.3 Determination of the Crystal Orientation; 4.4 Influence of Crystal Phase and Orientation on the Electrical Transport Properties of InAs Nanowires at Room Temperature; 4.4.1 Comparison of Device Performance with Different Crystal Structure; 4.4.2 Statistical Analysis on Device Parameters; 4.5 Influence of Crystal Phase and Crystal Orientation of InAs Nanowires on Electrical Transport Properties at Low Temperature
000856791 506__ $$aAccess limited to authorized users.
000856791 588__ $$aDescription based on online resource; title from digital title page (viewed on December 27, 2018).
000856791 650_0 $$aNanowires.
000856791 650_0 $$aField-effect transistors.
000856791 77608 $$iPrint version: $$z9811334439$$z9789811334436$$w(OCoLC)1059315597
000856791 830_0 $$aSpringer theses.
000856791 852__ $$bebk
000856791 85640 $$3SpringerLink$$uhttps://univsouthin.idm.oclc.org/login?url=http://link.springer.com/10.1007/978-981-13-3444-3$$zOnline Access$$91397441.1
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