Intro; Supervisor's Foreword; Abstract; Parts of this thesis have been published in the following journal articles:; Acknowledgements; Contents; 1 Introduction; 1.1 Advantages of InAs Nanowire-Based Electronic Devices; 1.1.1 Advantages of InAs Material for Fabricating High-Performance Electronic Devices; 1.1.2 Advantages of InAs Nanowires in Making Multi-gate and Gate-All-Around Devices; 1.2 Crystal Structure of InAs Nanowires; 1.3 Development Status of InAs Nanowire Electronic Devices; 1.3.1 InAs Nanowire MOSFETs; 1.3.2 InAs Nanowire TFETs

1.4 Several Problems of InAs Nanowire-Based Electronic Devices1.4.1 High OFF-State Current of Devices; 1.4.2 Interface State Between InAs Nanowires and Gate Dielectric; 1.4.3 Relation Between Structure of InAs Nanowires and Their Device Performance; 1.4.4 Dispersion of Device Performance; 1.5 Topic Ideas and Chapter Arrangements; References; 2 Fabrication, Characterization and Parameter Extraction of InAs Nanowire-Based Device; 2.1 Growth of InAs Nanowires; 2.2 Characterization, Device Fabricating and Electrical Measurement Equipment of Nanowires; 2.2.1 Characterization Equipment

2.2.2 Apparatus for Device Fabrication2.2.3 Apparatus to Characterize the Electrical Properties of Devices; 2.3 Fabrication Processes of InAs Nanowires Devices; 2.3.1 Dispersion and Transfer of InAs Nanowires; 2.3.2 General Fabrication Process for Planar InAs Nanowire Devices; 2.3.3 Fabrication Process for Suspended InAs Nanowire Devices; 2.4 Measurement and Characterization of InAs Nanowire Devices; 2.5 Extraction of Basic Electrical Parameters of InAs Nanowires Based on FETs; References; 3 The Impact of Quantum Confinement Effects on Electrical Properties of InAs Nanowires

3.1 Growth of Ultrathin InAs Nanowire3.2 High-Performance Device Based on Ultrathin InAs Nanowires; 3.3 Influences of Diameter on the InAs Nanowire Devices; 3.3.1 Influences of Diameter on the OFF-State Performance of InAs Nanowire Devices; 3.3.2 Larger Bandgap Induced by Smaller Diameter of InAs Nanowires; 3.3.3 Influence of Diameter on ON-State Performance of InAs Nanowire Devices; 3.4 Summary; References; 4 Influence of Crystal Phase and Orientation on Electrical Properties of InAs Nanowires; 4.1 Growth of InAs Nanowires in Different Orientations

4.2 Method of Transferring Nanowires in Devices to TEM for Structural Characterization4.3 Determination of the Crystal Orientation; 4.4 Influence of Crystal Phase and Orientation on the Electrical Transport Properties of InAs Nanowires at Room Temperature; 4.4.1 Comparison of Device Performance with Different Crystal Structure; 4.4.2 Statistical Analysis on Device Parameters; 4.5 Influence of Crystal Phase and Crystal Orientation of InAs Nanowires on Electrical Transport Properties at Low Temperature