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Intro; Preface; Contents; 1 Graphite and Intercalated Compound Superconductors: Atomic and Electronic Structures; 1.1 Introduction; 1.2 Graphite Intercalation Compounds (GICs); 1.3 Superconductivity in GICs; 1.4 Superconducting Mechanism of GIC Superconductors; 1.5 Atomic Structure of Graphite and GIC; 1.5.1 Principle of Photoelectron Diffraction and New Holography Algorithm; 1.5.2 Atomic Arrangement Imaging of GIC Cleaved Surface; 1.6 Electronic Structure of Graphite and GIC; 1.6.1 Transition Matrix Elements and Photoelectron Structure Factors; 1.6.2 Valence Band Dispersion of GIC
1.7 Future Perspectives of GIC SuperconductorReferences; 2 Physics of Graphene: Basic to FET Application; 2.1 Introduction; 2.1.1 History of Study on Graphene and 2D Electron System; 2.1.2 Extension of Study on Graphene and Future Perspectives; 2.2 Theoretical Aspects; 2.2.1 Crystal Structure; 2.2.2 Band Structure; 2.2.3 Electronic Property; 2.2.3.1 Linear Dispersion Relation; 2.2.3.2 Absence of Back Scattering; 2.2.3.3 Magnetic Field Effect; 2.3 Experimental Aspects; 2.3.1 Fabrication of Graphene FET; 2.3.1.1 Preparation of Graphene; 2.3.1.2 Identification of Graphene
2.3.1.3 Preparation of Devices2.3.2 Characteristics of Graphene FET; 2.3.2.1 Output and Transfer Characteristics; 2.3.2.2 Graphene p-n Junction; 2.3.3 Advantages and Disadvantages of Graphene for Device Application; 2.3.3.1 Advantages of Graphene; 2.3.3.2 Disadvantages of Graphene; 2.4 Application of Graphene FET: Carrier Accumulation in Graphene; 2.4.1 Electric Field Effect on Few-Layer Graphene with Ionic Liquid Gate; 2.4.2 Doping Effect on Monolayer Graphene with Electron Transfer Molecules; References; 3 Physics of Heavily Doped Diamond: Electronic States and Superconductivity
3.1 Introduction3.2 Electronic States of Diamond; 3.2.1 Crystal Structure and Basic Electronic States; 3.2.1.1 Crystal Structure; 3.2.1.2 Electronic Band Structure; 3.2.2 Semiconducting Behavior and Energy Diagram; 3.2.2.1 Natural Diamond; 3.2.2.2 Impurity Doping to Diamond; 3.2.2.3 Bohr's Hydrogen Atom Model; 3.2.2.4 Comparison with Si in Hydrogen Atom Model; 3.2.2.5 Hydrogen Crystal Model of the NM-M Transition in a Doped Semiconductor; 3.2.2.6 Other Models for NM-M Transition: Mott-Hubbard Model and Anderson Localization; 3.2.2.7 Impurity Concentration Dependence of Electronic State
3.2.2.8 Effect of Compensation3.2.2.9 Identification of the Nature of the NM-M Transition; 3.2.2.10 Role of the Impurity Band; 3.2.2.11 Boron-Doped Diamond; 3.3 Superconductivity in Heavily Doped Diamond; 3.3.1 Superconducting Properties; 3.3.2 Theoretical Studies on Electronic Structure and Models for Superconductivity; 3.3.3 Experimental Studies of Heavily Boron-Doped Diamond; 3.3.3.1 Electronic Structure with the Wider Energy Scale; 3.3.3.2 Valence Band Density of States; 3.3.3.3 Valence Band Dispersions; 3.3.3.4 Fermi Surface; 3.3.3.5 Impurity State
1.7 Future Perspectives of GIC SuperconductorReferences; 2 Physics of Graphene: Basic to FET Application; 2.1 Introduction; 2.1.1 History of Study on Graphene and 2D Electron System; 2.1.2 Extension of Study on Graphene and Future Perspectives; 2.2 Theoretical Aspects; 2.2.1 Crystal Structure; 2.2.2 Band Structure; 2.2.3 Electronic Property; 2.2.3.1 Linear Dispersion Relation; 2.2.3.2 Absence of Back Scattering; 2.2.3.3 Magnetic Field Effect; 2.3 Experimental Aspects; 2.3.1 Fabrication of Graphene FET; 2.3.1.1 Preparation of Graphene; 2.3.1.2 Identification of Graphene
2.3.1.3 Preparation of Devices2.3.2 Characteristics of Graphene FET; 2.3.2.1 Output and Transfer Characteristics; 2.3.2.2 Graphene p-n Junction; 2.3.3 Advantages and Disadvantages of Graphene for Device Application; 2.3.3.1 Advantages of Graphene; 2.3.3.2 Disadvantages of Graphene; 2.4 Application of Graphene FET: Carrier Accumulation in Graphene; 2.4.1 Electric Field Effect on Few-Layer Graphene with Ionic Liquid Gate; 2.4.2 Doping Effect on Monolayer Graphene with Electron Transfer Molecules; References; 3 Physics of Heavily Doped Diamond: Electronic States and Superconductivity
3.1 Introduction3.2 Electronic States of Diamond; 3.2.1 Crystal Structure and Basic Electronic States; 3.2.1.1 Crystal Structure; 3.2.1.2 Electronic Band Structure; 3.2.2 Semiconducting Behavior and Energy Diagram; 3.2.2.1 Natural Diamond; 3.2.2.2 Impurity Doping to Diamond; 3.2.2.3 Bohr's Hydrogen Atom Model; 3.2.2.4 Comparison with Si in Hydrogen Atom Model; 3.2.2.5 Hydrogen Crystal Model of the NM-M Transition in a Doped Semiconductor; 3.2.2.6 Other Models for NM-M Transition: Mott-Hubbard Model and Anderson Localization; 3.2.2.7 Impurity Concentration Dependence of Electronic State
3.2.2.8 Effect of Compensation3.2.2.9 Identification of the Nature of the NM-M Transition; 3.2.2.10 Role of the Impurity Band; 3.2.2.11 Boron-Doped Diamond; 3.3 Superconductivity in Heavily Doped Diamond; 3.3.1 Superconducting Properties; 3.3.2 Theoretical Studies on Electronic Structure and Models for Superconductivity; 3.3.3 Experimental Studies of Heavily Boron-Doped Diamond; 3.3.3.1 Electronic Structure with the Wider Energy Scale; 3.3.3.2 Valence Band Density of States; 3.3.3.3 Valence Band Dispersions; 3.3.3.4 Fermi Surface; 3.3.3.5 Impurity State