000867931 000__ 05633cam\a2200541Ii\4500 000867931 001__ 867931 000867931 005__ 20230306145928.0 000867931 006__ m\\\\\o\\d\\\\\\\\ 000867931 007__ cr\cn\nnnunnun 000867931 008__ 190403s2019\\\\sz\\\\\\ob\\\\001\0\eng\d 000867931 019__ $$a1099735988 000867931 020__ $$a9783030124694$$q(electronic book) 000867931 020__ $$a303012469X$$q(electronic book) 000867931 020__ $$z9783030124687 000867931 0247_ $$a10.1007/978-3-030-12469-4$$2doi 000867931 035__ $$aSP(OCoLC)on1091234996 000867931 035__ $$aSP(OCoLC)1091234996$$z(OCoLC)1099735988 000867931 040__ $$aN$T$$beng$$erda$$epn$$cN$T$$dN$T$$dGW5XE$$dEBLCP$$dUKMGB$$dUPM$$dOCLCF 000867931 049__ $$aISEA 000867931 050_4 $$aTJ1193$$b.N68 2019 000867931 08204 $$a620.198$$223 000867931 24500 $$aNovel aspects of diamond :$$bfrom growth to applications /$$cNianjun Yang, editor. 000867931 250__ $$aSecond edition. 000867931 264_1 $$aCham :$$bSpringer,$$c2019. 000867931 300__ $$a1 online resource. 000867931 336__ $$atext$$btxt$$2rdacontent 000867931 337__ $$acomputer$$bc$$2rdamedia 000867931 338__ $$aonline resource$$bcr$$2rdacarrier 000867931 347__ $$atext file$$bPDF$$2rda 000867931 4901_ $$aTopics in applied physics,$$x0303-4216 ;$$vvolume 121 000867931 504__ $$aIncludes bibliographical references and index. 000867931 5050_ $$aIntro; Dedication to Xin Jiang; Preface; About This Book; Contents; Contributors; 1 Homoepitaxial Diamond Growth by Plasma-Enhanced Chemical Vapor Deposition; Abstract; 1.1 Introduction; 1.2 Growth Mechanism; 1.2.1 Hydrogen; 1.2.2 Carbon; 1.3 Growth Modes; 1.4 Doping; 1.5 Growth of Atomically Flat Diamond; 1.5.1 Hillock-Free Surfaces; 1.5.2 Step/Terrace Structures; 1.5.3 Atomically Step-Free Surfaces; 1.6 Conclusions; Acknowledgements; References; 2 The Effect of Dopants on Diamond Surface Properties and Growth; Abstract; 2.1 Introduction; 2.2 Methods and Methodologies; 2.3 General 000867931 5058_ $$a2.3.1 Diamond Doping Using Nitrogen, Phosphorous, Sulphur or Boron2.3.1.1 N-type Doping Using Nitrogen; 2.3.1.2 N-type Doping Using Phosphorous or Sulphur; 2.3.1.3 P-Type Doping Using Boron; 2.3.2 Growth Mechanism; 2.3.3 H Abstraction Rates for Growth of Non-doped Diamond; 2.4 Nitrogen-Induced Effect on Diamond Growth; 2.4.1 Introduction; 2.4.2 N Substitutionally Positioned into Various C Atomic Layers; 2.4.3 N Substitutionally Positioned Within the C Atomic Layer 2; 2.4.4 N Chemisorbed onto the Surface in the Form NH or NH2; 2.5 Phosphorous- or Sulfur-Induced Effect on Diamond Growth 000867931 5058_ $$a2.5.1 Introduction2.5.2 Thermodynamics-H Abstraction Energies; 2.5.3 Kinetics-H Abstraction Barriers; 2.6 Boron-Induced Effect on Diamond Growth; 2.6.1 Introduction; 2.6.2 Thermodynamics-H Abstraction Energies; 2.6.3 Kinetics-H Abstraction Barriers; 2.7 Summary; Acknowledgements; References; 3 Chemical Mechanical Polishing of Nanocrystalline Diamond; Abstract; 3.1 Introduction; 3.2 Method for Chemical Mechanical Polishing of Diamond; 3.3 Chemical Mechanical Polishing of Diamond; 3.3.1 Polishing of Nanocrystalline Diamond Films; 3.3.2 Polishing of Single Crystal Diamond 000867931 5058_ $$a3.3.3 Polishing with Ceria and Alumina3.3.4 Abrasive Particle Size Dependence of Polishing; 3.3.5 Effect of Redox Agents on the CMP of NCD Films; 3.3.6 Possible Mechanism for Polishing; 3.4 CMP of Superconducting NCD Thin Films; 3.5 Conclusion; Acknowledgements; References; 4 Single Crystal Diamond Micromechanical and Nanomechanical Resonators; Abstract; 4.1 Introduction; 4.1.1 Background of MEMS; 4.1.2 Diamond for MEMS/NEMS; 4.2 Fabrication of Single Crystal Diamond Mechanical Resonators; 4.3 Structure of SCD Mechanical Resonators Fabricated by IAL Method 000867931 5058_ $$a4.4 Nanoindentation of SCD Resonators4.5 Mechanical Resonance Properties of SCD Mechanical Resonators; 4.5.1 Resonance Frequency of the SCD Mechanical Resonators; 4.5.2 Energy Dissipation in SCD Cantilevers and Quality Factor; 4.5.3 Strategies Toward High Quality-Factors; 4.6 Summary and Outlook; Acknowledgements; References; 5 Nitrogen Incorporated (Ultra)Nanocrystalline Diamond Films for Field Electron Emission Applications; Abstract; 5.1 Introduction; 5.2 Nitrogen in Diamond; 5.3 Nitrogen Ion Implanted UNCD Films; 5.4 In situ Doping Using N2 in a CH4/H2 Plasma 000867931 506__ $$aAccess limited to authorized users. 000867931 520__ $$aThis book is in honor of the contribution of Professor Xin Jiang (Institute of Materials Engineering, University of Siegen, Germany) to diamond. The objective of this book is to familiarize readers with the scientific and engineering aspects of CVD diamond films and to provide experienced researchers, scientists, and engineers in academia and industry with the latest developments and achievements in this rapidly growing field. This 2nd edition consists of 14 chapters, providing an updated, systematic review of diamond research, ranging from its growth, and properties up to applications. The growth of single-crystalline and doped diamond films is included. The physical, chemical, and engineering properties of these films and diamond nanoparticles are discussed from theoretical and experimental aspects. The applications of various diamond films and nanoparticles in the fields of chemistry, biology, medicine, physics, and engineering are presented. 000867931 588__ $$aOnline resource; title from PDF title page (viewed April 4, 2019) 000867931 650_0 $$aDiamonds, Industrial. 000867931 650_0 $$aElectronics$$xMaterials. 000867931 7001_ $$aYang, Nianjun,$$eeditor. 000867931 77608 $$iPrint version:$$z9783030124687 000867931 830_0 $$aTopics in applied physics ;$$vv. 121. 000867931 852__ $$bebk 000867931 85640 $$3SpringerLink$$uhttps://univsouthin.idm.oclc.org/login?url=http://link.springer.com/10.1007/978-3-030-12469-4$$zOnline Access$$91397441.1 000867931 909CO $$ooai:library.usi.edu:867931$$pGLOBAL_SET 000867931 980__ $$aEBOOK 000867931 980__ $$aBIB 000867931 982__ $$aEbook 000867931 983__ $$aOnline 000867931 994__ $$a92$$bISE