Electronic States of Narrow-Gap Semiconductors Under Multi-Extreme Conditions / Kazuto Akiba.

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Electronic States of Narrow-Gap Semiconductors Under Multi-Extreme Conditions / Kazuto Akiba.

9789811371073 (electronic book)
9811371075 (electronic book)
9789811371066
9811371067

Singapore : Springer, [2019]

English

1 online resource.

10.1007/978-981-13-7107-3 doi

QC611.8.N35

537.6223

This book discusses the latest investigations into the electronic structure of narrow-gap semiconductors in extreme conditions, and describes in detail magnetic field and pressure measurement using two high-quality single crystals: black phosphorus (BP) and lead telluride (PbTe). The book presents two significant findings for BP and PbTe. The first is the successful demonstration of the pressure-induced transition from semiconductor to semimetal in the electronic structure of BP using magnetoresistance measurements. The second is the quantitative estimation of how well the Dirac fermion description works for electronic properties in PbTe. The overviews on BP and PbTe from the point of view of material properties help readers quickly learn typical electronic characters of narrow-gap semiconductor materials, which have recently attract interest in topological features in condensed matter physics. Additionally the introductory review of the principles and methodology allows readers to easily understand the high magnetic field and pressure experiments.

"Doctoral Thesis accepted by the University of Tokyo, Tokyo, Japan".

Includes bibliographical references.

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Online resource; title from PDF title page (viewed April 8, 2019).

Springer theses.

Print version: 9789811371066

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