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Table of Contents
Intro; Preface; Acknowledgements; Contents; About the Author; List of Figures; List of Tables; Part I: Big Tree with Thick Trunk and Its Fruits; Chapter 1: Aim and Framework; 1.1 Research Aim and Its Importance; 1.2 Analytical Framework and Case Selection; 1.2.1 Longitudinal Industry-Level Analysis; 1.2.2 Case Selection; 1.3 Analytical Focus; Chapter 2: Theoretical Background: General Purpose Technology, Pattern of Innovation, and Spin-Out; 2.1 Highly Versatile Technology and Incremental Development; 2.2 Patterns of Innovation; 2.2.1 Paradigm and Innovation
2.2.1.1 Paradigm in the Structure of Scientific Revolution2.2.1.2 Focusing Device; 2.2.1.3 Technological Trajectory; 2.2.2 Trade-Offs in Innovations; 2.2.2.1 Dominant Design; 2.2.2.2 Dominant Design and Industrial Life Cycle; 2.2.2.3 S-Shaped Curve and Dematuration; 2.2.3 Summary; 2.3 Spin-Outs and Innovation; 2.3.1 Spin-Outs and Innovation; 2.3.1.1 Spin-Outs and Knowledge Ripple Effect; 2.3.1.2 Relationship Between Parental Firm and a Spin-out; 2.3.2 Spin-out Promoting Factors; 2.3.2.1 Labor Mobility; 2.3.2.2 Financing for Startups; 2.3.2.3 Submarkets and New Entrants; 2.3.3 Summary
2.4 Position of this StudyChapter 3: Data; 3.1 Innovation and Technological Change; 3.2 Measuring Innovation and Technology; 3.2.1 Total Factor Productivity; 3.2.2 R&D Investment; 3.2.3 Patent; 3.2.4 Expert Opinion and Award; 3.3 Data for Analysis of This Study; 3.3.1 Data on Technology; 3.3.2 Data on Firm Strategy; 3.3.3 Data on Business Environments; Chapter 4: Technological Characteristics of Laser and Laser Diode; 4.1 Laser and Its Basic Principle; 4.2 Basic Structure and Manufacturing Process of Laser Diode; 4.2.1 Crystal Growth; 4.2.2 Electrode Process; 4.2.3 Pelletizing
4.2.4 Measurement/Evaluation4.3 Material Selection and Manufacturing Technology; 4.3.1 Material Selection; 4.3.2 Epitaxy; 4.3.2.1 Liquid Phase Epitaxy: LPE; 4.3.2.2 Molecular Beam Epitaxy: MBE; 4.3.2.3 Metal Organic Chemical Vapor Deposition: MOCVD; 4.4 Characteristics and Market of Laser Diode; Part II: R&D and Market Competition of Laser Diodes in the U.S. and Japan; Chapter 5: Birth of the Laser Diode: It All Started in the U.S.; 5.1 Birth of the Maser; 5.2 From Maser to Laser; 5.3 Birth of Laser Diode; 5.4 Competition for Continuous Wave Operation at Room Temperature; 5.5 Summary
Chapter 6: Continuous Wave Operation at Room Temperature and Long Operating Life: Catch Up of the Japanese Firms6.1 Achievement of Continuous Wave Operation at Room Temperature; 6.2 Izuo Hayashi and Bell Laboratories; 6.3 Tens of Thousands of Hours Away from A Few Seconds; 6.4 Rising Level of Japanese Research: Longer Service Life; 6.4.1 Development of BH Laser and CSP Laser at Hitachi; 6.4.2 Development of TJS Laser at Mitsubishi Electric; 6.4.3 Rise of R&D Level and Start of Commercialization; 6.5 Research Community in Japan; 6.6 Summary
2.2.1.1 Paradigm in the Structure of Scientific Revolution2.2.1.2 Focusing Device; 2.2.1.3 Technological Trajectory; 2.2.2 Trade-Offs in Innovations; 2.2.2.1 Dominant Design; 2.2.2.2 Dominant Design and Industrial Life Cycle; 2.2.2.3 S-Shaped Curve and Dematuration; 2.2.3 Summary; 2.3 Spin-Outs and Innovation; 2.3.1 Spin-Outs and Innovation; 2.3.1.1 Spin-Outs and Knowledge Ripple Effect; 2.3.1.2 Relationship Between Parental Firm and a Spin-out; 2.3.2 Spin-out Promoting Factors; 2.3.2.1 Labor Mobility; 2.3.2.2 Financing for Startups; 2.3.2.3 Submarkets and New Entrants; 2.3.3 Summary
2.4 Position of this StudyChapter 3: Data; 3.1 Innovation and Technological Change; 3.2 Measuring Innovation and Technology; 3.2.1 Total Factor Productivity; 3.2.2 R&D Investment; 3.2.3 Patent; 3.2.4 Expert Opinion and Award; 3.3 Data for Analysis of This Study; 3.3.1 Data on Technology; 3.3.2 Data on Firm Strategy; 3.3.3 Data on Business Environments; Chapter 4: Technological Characteristics of Laser and Laser Diode; 4.1 Laser and Its Basic Principle; 4.2 Basic Structure and Manufacturing Process of Laser Diode; 4.2.1 Crystal Growth; 4.2.2 Electrode Process; 4.2.3 Pelletizing
4.2.4 Measurement/Evaluation4.3 Material Selection and Manufacturing Technology; 4.3.1 Material Selection; 4.3.2 Epitaxy; 4.3.2.1 Liquid Phase Epitaxy: LPE; 4.3.2.2 Molecular Beam Epitaxy: MBE; 4.3.2.3 Metal Organic Chemical Vapor Deposition: MOCVD; 4.4 Characteristics and Market of Laser Diode; Part II: R&D and Market Competition of Laser Diodes in the U.S. and Japan; Chapter 5: Birth of the Laser Diode: It All Started in the U.S.; 5.1 Birth of the Maser; 5.2 From Maser to Laser; 5.3 Birth of Laser Diode; 5.4 Competition for Continuous Wave Operation at Room Temperature; 5.5 Summary
Chapter 6: Continuous Wave Operation at Room Temperature and Long Operating Life: Catch Up of the Japanese Firms6.1 Achievement of Continuous Wave Operation at Room Temperature; 6.2 Izuo Hayashi and Bell Laboratories; 6.3 Tens of Thousands of Hours Away from A Few Seconds; 6.4 Rising Level of Japanese Research: Longer Service Life; 6.4.1 Development of BH Laser and CSP Laser at Hitachi; 6.4.2 Development of TJS Laser at Mitsubishi Electric; 6.4.3 Rise of R&D Level and Start of Commercialization; 6.5 Research Community in Japan; 6.6 Summary