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Table of Contents
Intro; Preface; Acknowledgements; References; Contents; Acronyms; Symbols; 1 Introduction; 1.1 Historical Remarks; 1.2 The Thermal Cycle; 1.3 Short Time Annealing; References; 2 The Technology of Flash Lamp Annealing; 2.1 Basic Structure of an FLA Tool; 2.2 Components of a Flash Lamp; 2.2.1 Dimensions and Gas Filling; 2.2.2 Electrodes; 2.2.3 The Envelope; 2.2.4 Cooling; 2.3 Plasma Discharge; 2.3.1 Trigger Pulse and Initial Streamer Formation; 2.3.2 Arc Expansion; 2.3.3 Plasma Properties in the Wall-Stabilized Regime; 2.3.4 The Post-discharge Period; 2.4 Electric Operation
2.4.1 Electric Characteristics of a Flash Lamp2.4.2 Circuitries; 2.4.3 Modelling of a Single RLC Section Circuit; 2.4.4 Active Pulse Shaping; 2.5 Optical Output; 2.5.1 The Plasma Spectrum; 2.5.2 Transparency and Radiation Pattern; 2.5.3 Time-Resolved Optical Properties; 2.5.4 Shaping the Spectral Output; 2.6 Flash Lamp Lifetime; 2.6.1 Single and Multiple Flash Operation; 2.6.2 Lamp Failure; 2.6.3 Lamp Degradation; 2.7 Layout of FLA Tools; 2.7.1 From Sheet-to-Sheet to Roll-to-Roll Processes; 2.7.2 Flash-Assisted Deposition; References; 3 Process Management; 3.1 Temperature Measurement
3.1.1 Pyrometry3.1.2 Temperature Measurement of Semiconductors; 3.1.3 Temperature Measurement During Annealing of Non-semiconductors; 3.1.4 True Temperature Measurement; 3.2 Temperature Simulations; 3.2.1 Mathematical Background; 3.2.2 Chamber Wall Reflection; 3.2.3 Temperature Profiles; 3.2.4 Heat Dissipation; 3.3 Homogeneity; 3.3.1 The Homogeneity of Irradiation; 3.3.2 Pattern Effects; 3.4 Thermal Stress; 3.4.1 Silicon; 3.4.2 Glassy Substrates and Thin Films; 3.5 Further Effects; References; 4 Semiconductor Applications; 4.1 Defect Engineering; 4.1.1 Defect Evolution During Annealing
4.1.2 Boron Diffusion in Si4.1.3 Studies Related to Flash Lamp Annealing; 4.2 Doping; 4.2.1 Ultra-Shallow Junctions in Silicon; 4.2.2 Hyperdoping in Silicon; 4.2.3 Doping and Superconductivity in Germanium; 4.2.4 Doping of Silicon Carbide; 4.2.5 Doping of III-V Compound Semiconductors; 4.2.6 Diluted Magnetic Semiconductors; 4.3 Crystallization; 4.3.1 Non-equilibrium Crystallization Modes; 4.3.2 Thin Films of Amorphous Silicon; 4.3.3 Silicon Compound Semiconductors; 4.4 Semiconductor Nanostructures; 4.4.1 Group IV Nanocluster; 4.4.2 Integration of III-V Nanocrystals into Silicon
4.4.3 NanowiresReferences; 5 Beyond Semiconductors; 5.1 Dielectric Thin Films; 5.1.1 High-k Materials; 5.1.2 Rare Earth Doping of SiO2; 5.2 Photovoltaic Applications; 5.2.1 Mono- and Polycrystalline Solar Cells; 5.2.2 Thin Film Solar Cells; 5.3 Transparent Conducting Oxides; 5.3.1 Zinc Oxide; 5.3.2 Titanium Oxide; 5.3.3 Indium Tin Oxide; 5.3.4 Other TCOs and Beyond; 5.4 Metallic Films; 5.4.1 Annealing of Thin Metal Films; 5.4.2 Material Property Engineering; 5.4.3 Silicides; 5.4.4 Printed Electronics; 5.4.5 Further Applications; 5.5 Flexible Substrates; 5.5.1 State of the Art
2.4.1 Electric Characteristics of a Flash Lamp2.4.2 Circuitries; 2.4.3 Modelling of a Single RLC Section Circuit; 2.4.4 Active Pulse Shaping; 2.5 Optical Output; 2.5.1 The Plasma Spectrum; 2.5.2 Transparency and Radiation Pattern; 2.5.3 Time-Resolved Optical Properties; 2.5.4 Shaping the Spectral Output; 2.6 Flash Lamp Lifetime; 2.6.1 Single and Multiple Flash Operation; 2.6.2 Lamp Failure; 2.6.3 Lamp Degradation; 2.7 Layout of FLA Tools; 2.7.1 From Sheet-to-Sheet to Roll-to-Roll Processes; 2.7.2 Flash-Assisted Deposition; References; 3 Process Management; 3.1 Temperature Measurement
3.1.1 Pyrometry3.1.2 Temperature Measurement of Semiconductors; 3.1.3 Temperature Measurement During Annealing of Non-semiconductors; 3.1.4 True Temperature Measurement; 3.2 Temperature Simulations; 3.2.1 Mathematical Background; 3.2.2 Chamber Wall Reflection; 3.2.3 Temperature Profiles; 3.2.4 Heat Dissipation; 3.3 Homogeneity; 3.3.1 The Homogeneity of Irradiation; 3.3.2 Pattern Effects; 3.4 Thermal Stress; 3.4.1 Silicon; 3.4.2 Glassy Substrates and Thin Films; 3.5 Further Effects; References; 4 Semiconductor Applications; 4.1 Defect Engineering; 4.1.1 Defect Evolution During Annealing
4.1.2 Boron Diffusion in Si4.1.3 Studies Related to Flash Lamp Annealing; 4.2 Doping; 4.2.1 Ultra-Shallow Junctions in Silicon; 4.2.2 Hyperdoping in Silicon; 4.2.3 Doping and Superconductivity in Germanium; 4.2.4 Doping of Silicon Carbide; 4.2.5 Doping of III-V Compound Semiconductors; 4.2.6 Diluted Magnetic Semiconductors; 4.3 Crystallization; 4.3.1 Non-equilibrium Crystallization Modes; 4.3.2 Thin Films of Amorphous Silicon; 4.3.3 Silicon Compound Semiconductors; 4.4 Semiconductor Nanostructures; 4.4.1 Group IV Nanocluster; 4.4.2 Integration of III-V Nanocrystals into Silicon
4.4.3 NanowiresReferences; 5 Beyond Semiconductors; 5.1 Dielectric Thin Films; 5.1.1 High-k Materials; 5.1.2 Rare Earth Doping of SiO2; 5.2 Photovoltaic Applications; 5.2.1 Mono- and Polycrystalline Solar Cells; 5.2.2 Thin Film Solar Cells; 5.3 Transparent Conducting Oxides; 5.3.1 Zinc Oxide; 5.3.2 Titanium Oxide; 5.3.3 Indium Tin Oxide; 5.3.4 Other TCOs and Beyond; 5.4 Metallic Films; 5.4.1 Annealing of Thin Metal Films; 5.4.2 Material Property Engineering; 5.4.3 Silicides; 5.4.4 Printed Electronics; 5.4.5 Further Applications; 5.5 Flexible Substrates; 5.5.1 State of the Art