TY  - GEN
T1  - Investigation on SiGe selective epitaxy for source and drain engineering in 22 nm CMOS technology node and beyond /
DA  - 2020.
CY  - Singapore :
AU  - Wang, Guilei.
CN  - QD921
PB  - Springer,
PP  - Singapore :
PY  - 2020.
N1  - "Doctoral thesis accepted by Chinese Academy of Sciences, Beijing, China."
ID  - 914811
KW  - Epitaxy.
KW  - Metal oxide semiconductors, Complementary
SN  - 9789811500466
SN  - 9811500460
TI  - Investigation on SiGe selective epitaxy for source and drain engineering in 22 nm CMOS technology node and beyond /
LK  - https://univsouthin.idm.oclc.org/login?url=http://link.springer.com/10.1007/978-981-15-0046-6
UR  - https://univsouthin.idm.oclc.org/login?url=http://link.springer.com/10.1007/978-981-15-0046-6
ER  -