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000914811 019__ $$a1121056641
000914811 020__ $$a9789811500466$$q(electronic book)
000914811 020__ $$a9811500460$$q(electronic book)
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000914811 049__ $$aISEA
000914811 050_4 $$aQD921
000914811 08204 $$a548/.5$$223
000914811 1001_ $$aWang, Guilei.
000914811 24510 $$aInvestigation on SiGe selective epitaxy for source and drain engineering in 22 nm CMOS technology node and beyond /$$cGuilei Wang.
000914811 260__ $$aSingapore :$$bSpringer,$$c2020.
000914811 300__ $$a1 online resource
000914811 336__ $$atext$$btxt$$2rdacontent
000914811 337__ $$acomputer$$bc$$2rdamedia
000914811 338__ $$aonline resource$$bcr$$2rdacarrier
000914811 4901_ $$aSpringer theses
000914811 500__ $$a"Doctoral thesis accepted by Chinese Academy of Sciences, Beijing, China."
000914811 504__ $$aIncludes bibliographical references.
000914811 506__ $$aAccess limited to authorized users.
000914811 650_0 $$aEpitaxy.
000914811 650_0 $$aMetal oxide semiconductors, Complementary$$xMaterials.
000914811 77608 $$iPrint version: $$z9811500452$$z9789811500459$$w(OCoLC)1111660482
000914811 830_0 $$aSpringer theses.
000914811 852__ $$bebk
000914811 85640 $$3SpringerLink$$uhttps://univsouthin.idm.oclc.org/login?url=http://link.springer.com/10.1007/978-981-15-0046-6$$zOnline Access$$91397441.1
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000914811 980__ $$aEBOOK
000914811 980__ $$aBIB
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000914811 983__ $$aOnline
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