Ferroelectric-gate field effect transistor memories : device physics and applications / Byung-Eun Park, Hiroshi Ishiwara, Masanori Okuyama, Shigeki Sakai, Sung-Min Yoon, editors.
2020
TK7871.95
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Details
Title
Ferroelectric-gate field effect transistor memories : device physics and applications / Byung-Eun Park, Hiroshi Ishiwara, Masanori Okuyama, Shigeki Sakai, Sung-Min Yoon, editors.
Edition
2nd ed.
ISBN
9789811512124 (electronic book)
9811512124 (electronic book)
9789811512117
9811512124 (electronic book)
9789811512117
Publication Details
Singapore : Springer, 2020.
Language
English
Description
1 online resource (421 pages).
Call Number
TK7871.95
Dewey Decimal Classification
621.3815284
Access Note
Access limited to authorized users.
Source of Description
Description based on print version record.
Added Author
Park, Byung-Eun.
Ishiwara, Hiroshi, 1945-
Okuyama, Masanori, 1946-
Sakai, Shigeki.
Yoon, Sung-Min.
Ishiwara, Hiroshi, 1945-
Okuyama, Masanori, 1946-
Sakai, Shigeki.
Yoon, Sung-Min.
Series
Topics in applied physics ; v. 131.
Available in Other Form
Ferroelectric-Gate Field Effect Transistor Memories : Device Physics and Applications
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