@article{930449,
      recid = {930449},
      author = {Park, Byung-Eun. and Ishiwara, Hiroshi, and Okuyama,  Masanori, and Sakai, Shigeki. and Yoon, Sung-Min.},
      title = {Ferroelectric-gate field effect transistor memories :  device physics and applications /},
      publisher = {Springer,},
      address = {Singapore :},
      pages = {1 online resource (421 pages).},
      year = {2020},
      url = {http://library.usi.edu/record/930449},
}