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000930449 020__ $$a9789811512124$$q(electronic book)
000930449 020__ $$a9811512124$$q(electronic book)
000930449 020__ $$z9789811512117
000930449 035__ $$aSP(OCoLC)on1148895632
000930449 035__ $$aSP(OCoLC)1148895632
000930449 040__ $$aEBLCP$$beng$$cEBLCP$$dGW5XE$$dEBLCP
000930449 049__ $$aISEA
000930449 050_4 $$aTK7871.95
000930449 08204 $$a621.3815284
000930449 24500 $$aFerroelectric-gate field effect transistor memories :$$bdevice physics and applications /$$cByung-Eun Park, Hiroshi Ishiwara, Masanori Okuyama, Shigeki Sakai, Sung-Min Yoon, editors.
000930449 250__ $$a2nd ed.
000930449 260__ $$aSingapore :$$bSpringer,$$c2020.
000930449 300__ $$a1 online resource (421 pages).
000930449 336__ $$atext$$btxt$$2rdacontent
000930449 337__ $$acomputer$$bc$$2rdamedia
000930449 338__ $$aonline resource$$bcr$$2rdacarrier
000930449 4901_ $$aTopics in Applied Physics Ser. ;$$vv.131
000930449 506__ $$aAccess limited to authorized users.
000930449 588__ $$aDescription based on print version record.
000930449 650_0 $$aField-effect transistors.
000930449 650_0 $$aFerroelectric thin films.
000930449 7001_ $$aPark, Byung-Eun.
000930449 7001_ $$aIshiwara, Hiroshi,$$d1945-
000930449 7001_ $$aOkuyama, Masanori,$$d1946-
000930449 7001_ $$aSakai, Shigeki.
000930449 7001_ $$aYoon, Sung-Min.
000930449 77608 $$iPrint version:$$aPark, Byung-Eun$$tFerroelectric-Gate Field Effect Transistor Memories : Device Physics and Applications$$dSingapore : Springer,c2020$$z9789811512117
000930449 830_0 $$aTopics in applied physics ;$$vv. 131.
000930449 852__ $$bebk
000930449 85640 $$3SpringerLink$$uhttps://univsouthin.idm.oclc.org/login?url=http://link.springer.com/10.1007/978-981-15-1212-4$$zOnline Access$$91397441.1
000930449 909CO $$ooai:library.usi.edu:930449$$pGLOBAL_SET
000930449 980__ $$aEBOOK
000930449 980__ $$aBIB
000930449 982__ $$aEbook
000930449 983__ $$aOnline
000930449 994__ $$a92$$bISE