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Table of Contents
Chapter 1: Introduction to III-V materials and HEMT Structure / Sanhita Manna
Chapter 2: III-V Hetero Structure Devices for Ultra Low, High Power and High Breakdown Applications / D.Godwinraj
Chapter 3: III-V Hetero Structure Devices for High Frequency Applications / R. Saravana Kumar
Chapter 4: Overview of THz Applications / T. Nagarjuna
Chapter 5: Device and Simulation Framework of InAs HEMTs / V. Mahesh
Chapter 6: Single Gate (SG) InAs Based HEMTs Architecture for THz Applications / M. Arun Kumar
Chapter 7: Effect of Gate Scaling and Composite Channel in InAs HEMTs / C. Kamalanathan
Chapter 8: Double Gate (DG) InAs Based HEMT Architecture for THz Applications / R. Poorna Chandran
Chapter 9: Influence of Dual Channel and Drain Side Recess Length in Double Gate InAs HEMTs / Y. Vamshidhar
Chapter 10: Noise Analysis in Dual Quantum Well InAs Based Double Gate (DG)
HEMT / Girish Shankar Mishra.
Chapter 2: III-V Hetero Structure Devices for Ultra Low, High Power and High Breakdown Applications / D.Godwinraj
Chapter 3: III-V Hetero Structure Devices for High Frequency Applications / R. Saravana Kumar
Chapter 4: Overview of THz Applications / T. Nagarjuna
Chapter 5: Device and Simulation Framework of InAs HEMTs / V. Mahesh
Chapter 6: Single Gate (SG) InAs Based HEMTs Architecture for THz Applications / M. Arun Kumar
Chapter 7: Effect of Gate Scaling and Composite Channel in InAs HEMTs / C. Kamalanathan
Chapter 8: Double Gate (DG) InAs Based HEMT Architecture for THz Applications / R. Poorna Chandran
Chapter 9: Influence of Dual Channel and Drain Side Recess Length in Double Gate InAs HEMTs / Y. Vamshidhar
Chapter 10: Noise Analysis in Dual Quantum Well InAs Based Double Gate (DG)
HEMT / Girish Shankar Mishra.