Lecture notes in analog electronics : low voltage electronic components, including diodes, transistors, optoelectronic and magnetoelectronic devices, and semiconductor technology / Vančo Litovski.
Litovski, Vančo, author.
2023
TK7881.15
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Title Lecture notes in analog electronics : low voltage electronic components, including diodes, transistors, optoelectronic and magnetoelectronic devices, and semiconductor technology / Vančo Litovski.
Author Litovski, Vančo, author.
ISBN 9789811998683 (electronic bk.)
981199868X (electronic bk.)
9811998671
9789811998676
DOI https://doi.org/10.1007/978-981-19-9868-3
Published Singapore : Springer, [2023]
Copyright ©2023
Language English
Description 1 online resource (xv, 424 pages) : illustrations (some color).
Item Number 10.1007/978-981-19-9868-3 doi
Call Number TK7881.15
Dewey Decimal Classification 621.381
Summary The book opens a magic miniature world of electronics to the reader. The book addresses what small means in terms of electronics and what clean means in terms of modern electronic technology. Consequently, the reader understands why the most advanced civilization of the ancient world the Egyptians was not capable to do electronics. The book also discusses functionalities of the low-voltage electronic components with the aim to implement them in electronic circuit design. At the same time, it also opens the space of electronic component design to the readers be it discrete or integrated. The book has an introduction section, 11 chapters, an appendix, index, and list of literature. Appendix A discusses a set of solved problems, Appendix B presents SPICE simulation examples, and Appendix C presents component numbering in marketing environment.
Bibliography, etc. Note Includes bibliographical references and index.
Access Note Access limited to authorized users.
Source of Description Online resource; title from PDF title page (SpringerLink, viewed June 19, 2023).
Series Lecture notes in electrical engineering ; v. 1002.
Available in Other Form Print version: 9789811998676
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Intro
Preface
Introduction to the Lecture Notes of Analogue Electronics (LNAE) SERIES
Contents
About the Author
1.1 Introduction
1.2 Electric Current in Semiconductors
1.2.1 Electronic Structure of the Isolated Atom
1.2.2 Electronic Structure of the System of Atoms
1.2.3 Electric Current in Semiconductors
1.2.3.1 P- and N-Type Semiconductors
1.2.3.2 Concentration of Free Carriers
1.2.3.3 The Fermi Level in a Semiconductor
1.2.3.4 The Drift Current
1.2.3.5 The Diffusion Current
1.2.3.6 The Continuity Equation
1.3 The p-n Junction and the Diode

1.3.1 The p-n Junction
1.3.2 Semiconductor Diodes
1.3.2.1 Characteristic of the Diode
1.3.2.2 Parameters of the Diode
1.3.2.3 Temperature Dependence of the Diode Characteristic
1.3.2.4 Limitations in the Use of the Diode
1.3.2.5 Capacitances of the Diode
1.3.2.6 Summary of the Diode Ratings
1.3.2.7 Varicap Diode
1.3.2.8 Tunnel Diode
1.3.2.9 Zener Diode
1.4 Bipolar Transistor-BJT
1.4.1 Introduction
1.4.2 Transistor Effect
1.4.3 BJT Currents and Their Components
1.4.4 Model of the BJT
1.4.5 Characteristics of BJT
1.4.6 The Current Gain Coefficient

1.4.7 Properties of the BJT at High Frequencies
1.4.8 Characteristics of BJT in Common-Emitter Configuration
1.4.9 Safe Operating Area of the BJT
1.4.9.1 Maximum Dissipated Power
1.4.9.2 Current Limitations
1.4.9.3 Minimum Voltage Between Collector and Emitter
1.4.9.4 Maximum Collector Voltage
1.4.9.5 Secondary Breakdown
1.4.9.6 The Complete Active Working Area
1.4.10 Drift Transistors
1.5 Junction Field Effect Transistor-JFET
1.5.1 Introduction
1.5.2 Characteristics of a JFET
1.5.2.1 Model of the JFET
1.5.3 Parameters of the JFET

1.5.4 Active Operating Area of the JFET
1.5.5 JFET at High Frequencies
1.5.6 JFET as a Voltage-Controlled Resistor
1.5.7 Constant Current Diode
1.6 Insulated Gate Field-Effect Transistors-IGFET
1.6.1 MOS Structure
1.6.1.1 MOS Capacitances
1.6.1.2 Threshold Voltage of the MOS Structure
1.6.2 MOS Transistor
1.6.3 Modeling the MOSFET
1.6.3.1 Models of Short-Channel MOS Transistors
1.6.3.2 MOSFET Model in the Subthreshold Region
1.6.4 Parameters of the MOSFET
1.6.5 Active Operation Area of the MOSFET
1.6.6 Capacitances of the MOSFET
1.6.7 Dual-Gate MOSFET

1.7 MESFET
1.7.1 The Device
1.7.2 MESFET Model for Large Signals
1.7.3 Characteristics of the MESFET
1.7.4 Parameters of the MESFET
1.7.5 Dynamic Properties of the MESFET
1.7.6 Active Operation Area of the MESFET
1.7.7 Development of a MESFET
1.8 Optoelectronic Components
1.8.1 Photodetectors
1.8.1.1 Photoresistor
1.8.2.1 Photodiode
1.8.1.3 Solar Cell
1.8.1.4 Other Photodetectors
1.8.2 Light Sources
1.8.2.1 LED
1.8.2.2 Semiconductor LASER Diode
1.8.3 Optocouplers
1.9 Magnetoelectronic Components
1.9.1 Introduction
1.9.2 Hall Generators

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