The source/drain engineering of nanoscale Germanium-based MOS devices [electronic resource] / Zhiqiang Li.
2016
TK7871.95
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Details
Title
The source/drain engineering of nanoscale Germanium-based MOS devices [electronic resource] / Zhiqiang Li.
Author
Li, Zhiqiang, author.
ISBN
9783662496831 (electronic book)
3662496836 (electronic book)
9783662496817 print
3662496836 (electronic book)
9783662496817 print
Published
Berlin : Springer, 2016.
Language
English
Description
1 online resource (xiv, 59 pages) : color illustrations.
Other Standard Identifiers
10.1007/978-3-662-49683-1 doi
Call Number
TK7871.95
Dewey Decimal Classification
621.3815/2
Note
"Doctoral thesis accepted by Peking University, Beijing, China."
Bibliography, etc. Note
Includes bibliographical references.
Access Note
Access limited to authorized users.
Source of Description
Online resource; title from PDF title page (viewed March 30, 2016)
Series
Springer theses.
Available in Other Form
Print version: 9783662496817
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Table of Contents
Introduction
Ge-based Schottky barrier height modulation technology
Metal germanide technology
Contact resistance of Ge-based devices
Conclusions.
Ge-based Schottky barrier height modulation technology
Metal germanide technology
Contact resistance of Ge-based devices
Conclusions.