Tunneling field effect transistor technology [electronic resource] / Lining Zhang, Mansun Chan, editors.
Zhang, Lining, editor.; Chan, Mansun, editor.
2016
TK7871.95
Available Online

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Details

Title
Tunneling field effect transistor technology [electronic resource] / Lining Zhang, Mansun Chan, editors.
ISBN
9783319316536 (electronic book)
3319316532 (electronic book)
9783319316512
3319316516
DOI
https://doi.org/10.1007/978-3-319-31653-6
Published
Cham : Springer, 2016.
Language
English
Description
1 online resource (ix, 213 pages) : illustrations.
Item Number
10.1007/978-3-319-31653-6 doi
Call Number
TK7871.95
Dewey Decimal Classification
621.3815/284
Summary
This book provides a single-source reference to the state-of-the art in tunneling field effect transistors (TFETs). Readers will learn the TFETs physics from advanced atomistic simulations, the TFETs fabrication process and the important roles that TFETs will play in enabling integrated circuit designs for power efficiency. · Provides comprehensive reference to tunneling field effect transistors (TFETs); · Covers all aspects of TFETs, from device process to modeling and applications; · Enables design of power-efficient integrated circuits, with low power consumption TFETs.
Note
Includes index.
Access Note
Access limited to authorized users.
Source of Description
Online resource; title from PDF title page (SpringerLink, viewed April 14, 2016).
Added Author
Zhang, Lining, editor.
Chan, Mansun, editor.
Available in Other Form
Print version: 9783319316512
Linked Resources
Online Access
Record Appears in
Online Resources > Ebooks
All Resources
Steep Slope Devices and TFETs
Tunnel-FET Fabrication and Characterization
Compact Models of TFETs
Challenges and Designs of TFET for Digital Applications
Atomistic Simulations of Tunneling FETs
Quantum Transport Simulation of III-V TFETs with Reduced-Order k ·p Method
Carbon Nanotube TFETs: Structure Optimization with Numerical Simulation.

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