Tantalum and niobium-based capacitors : science, technology, and applications / Yuri Freeman.
2022
TK7872.C65 F74 2022
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Details
Title
Tantalum and niobium-based capacitors : science, technology, and applications / Yuri Freeman.
Author
Edition
Second edition.
ISBN
9783030895143 (electronic bk.)
3030895149 (electronic bk.)
9783030895136
3030895130
3030895149 (electronic bk.)
9783030895136
3030895130
Published
Cham : Springer, [2022]
Copyright
©2022
Language
English
Description
1 online resource : illustrations
Item Number
10.1007/978-3-030-89514-3 doi
Call Number
TK7872.C65 F74 2022
Dewey Decimal Classification
621.31/5
Summary
This book provides a comprehensive analysis of the science, technology, and applications of Tantalum and Niobium-based capacitors. The author discusses fundamentals, focusing on thermodynamic stability, major degradation processes and conduction mechanisms in the basic structure of Me-Me2O5-cathode (Me: Ta, Nb). Technology-related coverage includes chapters on the major manufacturing steps from capacitor grade powder to the testing of finished capacitors. Applications include high reliability, high charge and energy efficiency, high working voltages, high temperatures, etc. The links between the scientific foundation, breakthrough technologies and outstanding performance and reliability of the capacitors are demonstrated. The theoretical models discussed include the thermodynamics of the amorphous dielectrics, conduction mechanisms in metal-insulator-semiconductor (MIS) structures, band diagrams of the organic semiconductors, etc. Provides a single-source reference to the science, technology, and applications of Tantalum and Niobium-based capacitors; Focuses on Polymer Tantalum capacitors, with rapidly growing applications in special and commercial electronics; Discusses in detail conduction and degradation mechanisms in amorphous dielectrics and multilayer capacitor structures with amorphous dielectrics, such as metal-insulator-semiconductor (MIS) structures with inorganic and organic semiconductors, as well as MOSFET transistors with high k dielectrics.
Bibliography, etc. Note
Includes bibliographical references and index.
Access Note
Access limited to authorized users.
Digital File Characteristics
text file
PDF
Source of Description
Online resource; title from PDF title page (SpringerLink, viewed December 22, 2021).
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Table of Contents
Introduction
1: Major Degradation Mechanisms
2: Basic Technology
3: Applications
4: Conclusion.
1: Major Degradation Mechanisms
2: Basic Technology
3: Applications
4: Conclusion.